MOSFET (Si/SiC) Forum Discussions
Hi, i'm working on DC chopper circuit in LTSpice. In the design, i'm using the model IAUS300N08S5N012T_L1 model provided by Infineon. But, while simulate it, the simulation takes too long and also struck in between. What might be the possible issue? Is anything going wrong? Attached the image for your reference.
And, kindly help me with some example circuit on using these MOSFETs in LTSpice.
Thanks.
Show LessDear,
When I attempt to import Infineon SPICE Model to simscape wiht subcircuit2ssc, I met the following problem.
"Error using spiceSubckt/getFunctionCalls
Functions must be enclosed in {}."
I have already examined the amount of "{" and "}" in .lib file, they are matched;
SPICE Model code is attached as .txt file
When I import OptiMOS_5_100V_PSpice.lib or OptiMOS_5_80V_PSpice.lib, I haven't met any problems
Could anyone can help me? Thanks a lot
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Hello,
Recently I received 2 lots of infineon product id IRF3205PBF. The outer label barcode marking is different. Can anyone help me to confirm which is authentic.
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For Si MOSFET IPD90N04S4L-04.xls (infineon.com), the transient thermal impedance graph is as below -
Are all these curves for single pulse? Or repeated pulses?
I want to calculate the peak pulse current & power dissipation capacity for this MOSFET for specific pulse duration for repeated pulses. If above graph is for single pulses, then for repeated pulses how to calculate power dissipation ?
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I am searching for Infineon SiC MOSFETs with a 1200V blocking voltage and low on-resistance (RDSon). When comparing the "best" discrete MOSFETs (those with the lowest RDSon, for my case) with those in the hybrid pack, I've noticed that the MOSFETs in the hybrid pack seem to achieve a significantly lower RDSon compared to the discrete ones. I have a couple of questions regarding this:
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Am I understanding this correctly? Is it true that the hybrid pack MOSFETs outperform the discrete MOSFETs in terms of on-resistance within the same voltage class?
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If I am understanding this correctly, could you please explain why there is such a substantial difference? I'd appreciate a simple explanation to help me understand the underlying reasons.
For example, at the time of this writing, I am finding that the discrete SiC MOSFET with the lowest RDSon is the IMZA120R007M1H (IMZA120R007M1H - Infineon Technologies) with RDSon = 7 mΩ. Compares this with much-lower RDSon = 2.75 mΩ of the hybrid pack MOSFETs in the FS03MR12A6MA1LB hybrid pack drive module (FS03MR12A6MA1LB | This HybridPACK™ Drive is a very compact six-pack module (1200V/400A) optimized for hybrid and electric vehicles. - Infineon Technologies).
Thanks for considering my question. The answer may be very obvious to you (e.g., perhaps the reason is that they have different packages) but I'm curious.
Show LessThe topology is LLC and the topic I need assistance is with calculating the switching losses at turn off( ZVS at turn on are negligible). I have gone through many datasheets and application notes but the Tf is given at particular opearing point( for eg at Vdd 400V , T =25°, Id = 9.5A, Rg = 3.4ohm, this is for IPP60R190E6).
The switching here is ZVS which is different than hard switching and for a fact we know the voltage across the mosfet in soft switching only changes after the current throught mosfet falls to zero.
After reading certain application notes , I realised that Tf is the parameter that is used for calculation of switching losses at turn off.
So to model the losses accurately , I would need Tf as a function of Vdd, Id , Temp . Kinldy suggest a way around this.
Show LessHello, For MOSFETs with thermal resistance less than 1K/W, is method 1(the separation point of two thermal impedance curves) used to determine RthJC?How to determine RthJC accuratly?
Show LessI cannot find the datasheet of IRF7341TRPBFXTMA1. Can someone send it to me tchu@sakuraus.com? I wanted to compare it with IRF7341TRPBF. If you know the differences between the two already, your sharing will be highly appreciated!
Thanks,
Timothy
Show LessEVAL-M5-IMZ120R-SICの基板の大きさ、4つ角にある固定穴の位置、アプリケーションノートP9記載のConnector for controller、その他外部との接続が必要なコネクタの実装位置を教えてください。
Please tell me the size of the EVAL-M5-IMZ120R-SIC board, the positions of the fixing holes in the four corners, and the mounting positions of the Connectors for controller and other connectors that need to be connected to external devices as described in Application Note P9.
User Manual EVAL_M5_IMZ120R_SIC (infineon.com)
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