MOSFET (Si/SiC) Forum Discussions
I have a question about voltage drop of body diode in MOSFET.
I heard that voltage drop value of the body diode is vary while dead-time.
What I want to do is calculate conduction loss of three-phase two-level inverter using SiC MOSFET.
So I want to know why voltage drop value of the body diode vary while dead-time, and how to calculate it.
Thanks for reading my question, and If there are any related additional materials, please give me a chance to read them.
Thank you.
Show LessIn Imbf170r650m1 MOSFET please let me know how to connect sense pin ID is not used. Can we connect it to source or gate or keep it open?
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/MOSFET-sense-pin/td-p/719602
Show LessHello Everyone.
I tried to run the application examples of plecs in my computer but i am receiving the following error:
Error evaluating parameter 'MOSFET loss tables' in component boost_converter_with_pfc_and_thermal_model/Q1: File 'SPP20N60C3' was not found in the search path.
so what shall I do now??
Thanks,
Regards,
Hamza Ahmed Nadeem
For an induction motor drive project (scalar control), I am trying to drive the motor using the EVAL-M5-E1B1245N-SiC evaluation board. Using TMS320F28377D processor, I generated a 10kHz SPWM with 8Hz sine frequency. Furthermore, since I do not have a high voltage DC supply, I can provide maximum 65V DC to the DC-bus. Thus, I tried turning on the flyback converter using the on-board test-points. Here is the list of all the connections I made.
65V DC -> DC+ (X6)
6V DC -> TP651
-15V DC -> TP661
5V DC-> B1 (X10)
sPWM Waveforms-> B3-B8 (X10)
Using the abovementioned setup, when I checked the power mosfets, I saw that they are not switching (I see ~6V DC instead of PWM waveforms). Then, I checked the /OC-/OT pin (TP606), I observed a 0V waveform, which, according to the datasheet, is an indication of an overcurrent. When I check the DC supply, I see that the DC bus channel goes under overcurrent as well and provides a 0.001 A current afterwards. Is there any other thing I should check, how can I approach this problem? Thanks in advance.
Show Less
Dear IFXer,
Normally the junction is not accessible for direct thermal measurement. As a alternative, case temperature based on junction estimation is a reasonable approach.
Could you help advise the measurement point for PG-HSOF-8 package? and how does different about these measurement point? such as temperature varies.
1. Drain lead
2. Mid of mold center
3. Drain ear
4. Source lead
Show Less
Dear community,
I am trying to make sense of the information reported in the datasheet of the Si Mosfet IPP075N15N3 G, and the information reported in the 2006 Infineon App note MOSFET Power Losses Calculation Using the Data-Sheet Parameters, by Graovac, Pürschel and Kiep, and I have a few questions.
(1) Regarding rise-time, fall-time and delay time reported in the mosfet datasheet, seem to refer to some test condition with RG = 1.6 Ohm. Is this the value of the external gate resistance applied to the MOSFET? or else?
(2) When trying to simulate via LT spice the switching loss, I used the circuit below, which I adapted from the diagram in the 2006 Infineon app note. (In LTSpice, the MOSFET was already present in the library after I installed it). In the circuit, I guessed the values of turn on gate resistance, and turn off gate resistance, but I am not sure these are ok. Should I just use one resistance in the gate with a value of RG = 1.6 Ohm? I am asking because the switching loss loss that I measure on LTspice on Mosfet M1 results about twice as big compared to the switching loss on M1 I calculated using the method described in the 2006 Infineon application note I stated above. Note that in the circuit below, I specified VDD = 75 V, VGS = 10V, ID = 100A like in the MOSFET datasheet .
(3) I am using a switching frequency of 1 MHz in the LT spice circuit reported, but I am not sure that this is correct either (perhaps too high? I am not sure what is the frequency value used when the MOSFET is tested in real life to measure rise and fall time).
Finally, my objective would be to use LT spice to confirm that the switching loss calculation I made according to the 2006 Infineon application note are correct, or at least in the right ball park. Once I confirm that, I would like to evaluate switching losses at different valued of ID and VDD, and create enough data so that I can input some energy loss tables in PLECS, representing as accurately as possible the loss behavior of IPP075N15N3 G .
Thank you so much for your help
Show Less
Hi everyone, I've been facing an issue in my MOSFET section. My input supply is 12V, but the output I'm getting is only 10V. There's a drop of around 2V across the source and drain, even under no-load conditions. I'm using the IAUA250N04S6N006 MOSFET with a gate voltage of 12V. I don't know why the voltage drop occurs in a no-load condition. Can anyone help me? Thanks in advance
Show LessDoes the Rthjc listed in the data sheet refer to the thermal resistance for the top surface or the bottom surface (Drain part)?
I would like to know the thermal resistance values (Typ/Max) of both the top and bottom surfaces.
The device I am considering using is IAUC120N06S5L032 or IAUC60N04S6L039.
Best Regards,
Tetsuo
Sir,
Kindly let me know, if INFINEON have 6 pin out mosfet with 4 pins on one side and two pins on another side.
If it is suitable for BLDC motor application in automotive industry and share the documents regarding that.
Share me the details asap.
Regards
pgm
Show LessHi,
Can you help to review this schematic.
I want to replace the Optocoupler 817 point 18,38 and 37 to suitable Digital Isolators.
Currently, the design uses three optocouplers, and aim to replace them with digital isolators that can accommodate up to four channels.
I need suggestion which product suitable the and how the connection.
Thank You