MOSFET (Si/SiC) Forum Discussions
When I choose BSC090N03LS_L1 already, should I select Model Level to 1 as the below showing?
It seems BSC090N03LS_L1 is model level 1, what is the difference if select Model Level 0 or 1 in the option of simplis?
Thanks very much!
Do you have a document about the complete name of Infineon datasheet parameter abbreviations? Do you have a full version of zhe document? I really need it.Show Less
I am attempting to import the 1200 V Infineon device models into Matlab Simulink using 'subcircuit2ssc', however when I attempt to in Matlab I get the error:
"Subcircuit delimiters is not in expected format.
Error in spiceSubckt
Error in subcircuit2ssc"
I have changed the numbers such as MEGA to 1e9 etc and ** to ^ to match Matlab use but still get the same errors. Any suggestions on other sections of the .lib to change in order to make it work with subcircuit2ssc would be much appreciated.
The original model code is attached below.
I built a PLECS simulation of a LC-SRC(Series Resonant Converter) for bi-directional power flow. And I am going to use one of Infenion's SiC-Mosfet power module (62mm) (1.2kV and 500A).
As you can also see from figure, what I attached below, SRC consists of two H-Bridges, one operates in inverter-mode to supply square wave Voltage across LC-resonant tank and the other one operates in synchronous rectifier mode. In 2. H-bridge (synchronous rectification) there is a negative current flowing through the switches (reverse current), which is indicated as 3rd quadrant operation of the MOSFET in datasheets. Both H-bridges switches synchronous. So the switches in 2nd H-Bridge (synchronous rectification) are switched-on and -off while negative current flowing through them. Which means that current will flow through the body diode and the MOS-Channel of the MOSFET. Therefore I expect that there will be switching losses.
By using the related figures with 3rd quadrant operation one can approximately calculate the conduction losses, but there are no information or publication about switching losses during 3rd quad operation!
My question is, would switching losses arise in 3rd quadrant operation ? if yes what would be the characteristic of it (same as first quadrant switching losses)?Show Less
I have been simulating the Infineon IMW120R030M1H in LTSpice and PLECS (using the PLECS blockset with Simulink). Both models are provided on this website.
I have set up an identical double pulse test in both softwares and tested the Infineon device. I am aware that PLECs models switching devices ideally and then uses look up tables for losses. Am I right to say that as Infineon have provided both models they will behave the same under the same conditions? I have tested this theory and the PLECs model has higher losses but lower temperature rise.
I understand if the temperature is not identical as the softwares model thermal environments differently- but surely the losses should be very similar?
Vgs to Device:
Thankyou in advance, let me know if any questions!Show Less