MOSFET (Si/SiC) Forum Discussions
I have some basic entry-level questions regard the power loss of MOSFET with bodydiode and hope someone could provide some clarification - thank you in advance for patience!
1, When both current and voltage are reversed, it is called "3rd quadrant" operation, correct?
2. My understanding is that when 3rd quadrant operation, only bodydiode will conduct the current(reversed) and thus has CONDUCTION loss. But why (for PLECS simulation) the given thermal model/datasheet also include the CONDUCTION loss of the MOSFET itself? So, MOSFET itself is also able to conduct the reversed current? How?
3. Even if MOSFET itself can also conduct the reversed current, why there's no SWITCHING loss (but only CONDUCTION loss) involved in the given thermal model?
4. The given thermal model of the bodydiode has no SWITCHING loss. Why is it so?
Thank you for patience.Show Less
because of the MOSFET IRLS3036 shortage situation,
we have reveived a questionaire of a european vehcile manufacturer.
The questions within this list are aimed to understand the differences bewteen ...
the IRLS3036 and the IRLS4030,
the IRLS3036 and the IRLS3034,
the IRLS3036 and the IRL60S216
regarding e.g. the wafer-parameter and the die-parameter.
Bceause the list with the questions is Intellectual Property of the vehcile manufacturer:
Could you please provide to me the email-adress / the contact data of the responsible engineer at Infineon to answer these questions / to provide this data?
Thank you very much in advance!
I use BSZ097N04 on a switching regulator design. I need to make sure the junction temperature is less than 150C.
the power go through the MOSFET have 66% duty cycle. I can only find Zth(jc) plot in the data sheet and curves are only available with less than 50% duty cycle. However i need to know Zth(ja), as it specified PCB cooling size, to calculate junction temperature.
1. can you tell me how to calculate junction temperature in my case?
2. for Zth(jc) (junction-to-case) this case is top side or bottom side of package?
For Vo > 2.55V, a divider is used to set feedback to 1/2 of Vout, so 5.1V would map down to 2.55. Would it be permissible to slightly offset that FB in order to get another 0.2V output?
We need to get 5.3V output from one of the channels.
Thank you, John Show Less
I'm using back-to-back 100V / 40A IRF5210PBF power P-channel MOSFETs in a 48V power switch with a short time duration soft-start. Occasionally a MOSFET dies. Would you please tell me why?
The input and output MOSFETs of the switch are protected by
- 48V TVS's (Infineon, P/N 824520481, 600W, Vclamp = 77.4Vpk @ 10/1000usec 7.8A) to handle voltage pulses on turn-On, turn-Off, and with motors turning On and Off. To prevent avalanche faults.
- The load is a bank of motor driver boards with a heavy capacitive load of 10,500uF total max, all MLCCs.
- Average motor current is less than 7A with random load spikes lasting microseconds up to 16A peak.
- 400V/10A power diodes on the power output connectors to the motor boards, cathodes to the +48V supply input
- The soft-start is a very short duration right now since I didn't want to risk over heating the power MOSFETs and didn't know everything I'd eventually be powering with their own power reset periods. In other words, a normal design. 🙂
Any suggestions for improvements? The back-to-back approach was used so I didn't back-power something else on the same +48V supply when shutting things down.
I want to use a three level booster with 12V-48V battery voltage to boost voltage up to 400 volts. A 400 volts input can also be used to charge the battery. I have enclosed simulation diagrams. Please let me know if lead acid battery will be able to withstand 200 volts negative voltage. Thanks.Show Less
I would like to test the FSFB topology for a battery charger. This will require Constant current charging. Though, PCMC is explained, it controls the transformer primary current which would not directly limit the output current. Is there a method to include output current control using the XMC m/c?
Thanks Show Less
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context : .SUBCKT S4-40_A_VAR DD G S0 SP TJ PARAMS: A=1 RSP=1 DVTH=0 DRDSON=0 DGFS=0 INN=1 UNN=1 RMAX=1 GMIN=1 RS=1 RP=1 DC=0 RMET=1U
What's the reason? Show Less
I contact you about the obsolete reference INFINEON BSP298
Can you tell me what is the difference between a BSP298H (BSP298H6327XUSA1 for example) and BSP298L (BSP298L6327HUSA1 for example) ?
This product is supposed to operate for 8 hours per night , every day of the year.
For how many years do you think this MOSFET will last?
https://www.infineon.com/dgdl/Infineon-IPP90R1K2C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a89fe8085c04 Show Less