MOSFET (Si/SiC) Forum Discussions

1. When the N-MOSFET is completely turned off, when there is a single voltage pulse at both ends of the D-S pole, and the maximum value of the pulse exceeds the minimum value specified in the MOSFET specification. In such a scenario, when evaluating whether the MOSFET is at risk of voltage stress breakdown, is it necessary to look at the pulse width time of this single pulse? Still, there is no need to look at the pulse width time of the pulse; just determine whether the maximum value of the pulse exceeds the minimum value in the specification.

2. When browsing the MOSFET specification, I found that the voltage stress for VDS in the AOS specification, for example, would test a VDS SPIKE parameter; this parameter was not found in the IR specification. So when I use the IR BSZ018N04LS6 device, there will be a single pulse impact with a maximum value of 48V and a pulse width of 500ns at both ends of the D-S pole. In this case, how to determine whether the IR device will break down due to overvoltage according to the parameters in the specification. If I use an AOS device, I can evaluate it based on the parameter values of VDS SPIKE by considering the parameter items in the specification.

Examples of AOS specifications:

Example specifications using IR device models: No VDS SPIKE parameter items

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