MOSFET (Si/SiC) Forum Discussions
I am currently working on PLECS Simulink platform about an inverter model using your SiC MOSFET PLECS model (IMZA120R020M1H), I am quite confused about the conduction loss in the thermal model, hense I have 2 questions about this thermal model.
1. Just as the following picture 1 shows that the Von of Forward MOSFET und Reverse MOSFET is same, considering the effects of bodydiode inside MOSFET it is usually that the Von of Forward MOSFET und Reverse MOSFET should be at least a little different, right? As far as I see, the Von of Reverse MOSFET should be a little lower than Foward MOSFET, since the Ron of Reverse channel is lower.
2. Since the PLECS thermal model type is "MOSFET with Diode", so the conduction loss should be a total conduction losses of MOSFET and bodydiode. And if there is not positive gate signal for MOSFET, the reverse conduction channel should only be bodydiode, right? However unfortually it seems that the thermal model has mixed the Reverse MOSFET channel and bodydiode channel. It is sad that I can't upload my plecs model in the attachment, so you can figure out my problem clearly. The problem is when there is no positive gate signal for S5/S6 MOSFET (shown in picture 2), it still works in the Reverse channel of MOSFET, due to no extra bodydiode channel for current to conduct. For this problem, can you give me a suggestion to fix it? Or do you maybe have the newest correct PLECS model that can help me solve this problem?
Thanks a lot for your answer and help!
I would like to know the dimensions of the recommended footprint of the MOSFET "PT012N08NF2S"
It was not listed in the data sheet.
I'm sorry, but it would be helpful if you could tell me.
Thank you in advance.Show Less
We've done X ray test on IRLR3110ZTRPBF, and found the structure is different, the date code is 2207 vs 2203, is there any documents indicated for the PCN? the structure is related to the factory location? One is Diffused in TAWAN, Assembled in CHINA, the other one is only Assembled in CHINA.
I am trying to connect multiple si-carbide power Mosfet in parallel connection, Also I am using driver IC (1ED3123MU12HXUMA1). I have a question that can I short IN+ pin of two driving IC with PWM signal?
Can anyone please suggest solution.
Hi, can I read a shunt placed like this? I need to share this shunt with another IC and this location is mandatory.
I am working on a project that enhances the fast transient response of an LDO using Reinforcement Learning (code written in Python). My problem is that I cant find any software to do the simulation to train the RL model and to see the result. I tried using Simulink but it cant be done since I need the circuit to be in SPICE and I also tried using subcircuit2ssc to convert the circuit from ltspice to simulink but multiple errors occurred, I also tried working with LabVIEW and multisim but it can not be done. Any suggestions for a suitable softwareShow Less
Is the graph already adjusted for temperature? It appears RDS(on) in the left margin is the value for each temperature, correct?
Table is slightly different identifies the left margin as RDS(on) (normalized to 25C) and would require the respective value on the left of the graph to be multiplied by RDS(on), Max, to get the resulting RDS(on) at the respective temperature, correct?