Hi,

I am currently working on PLECS Simulink platform about an inverter model using your SiC MOSFET PLECS model (IMZA120R020M1H), I am quite confused about the conduction loss in the thermal model, hense I have 2 questions about this thermal model.

1. Just as the following picture 1 shows that the Von of Forward MOSFET und Reverse MOSFET is same, considering the effects of bodydiode inside MOSFET it is usually that the Von of Forward MOSFET und Reverse MOSFET should be at least a little different, right? As far as I see, the Von of Reverse MOSFET should be a little lower than Foward MOSFET, since the Ron of Reverse channel is lower.

2. Since the PLECS thermal model type is "MOSFET with Diode", so the conduction loss should be a total conduction losses of MOSFET and bodydiode. And if there is not positive gate signal for MOSFET, the reverse conduction channel should only be bodydiode, right? However unfortually it seems that the thermal model has mixed the Reverse MOSFET channel and bodydiode channel. It is sad that I can't upload my plecs model in the attachment, so you can figure out my problem clearly. The problem is when there is no positive gate signal for S5/S6 MOSFET (shown in picture 2), it still works in the Reverse channel of MOSFET, due to no extra bodydiode channel for current to conduct. For this problem, can you give me a suggestion to fix it? Or do you maybe have the newest correct PLECS model that can help me solve this problem?

Thanks a lot for your answer and help!

Best regards

Joy

Hello.

I would like to know the dimensions of the recommended footprint of the MOSFET "PT012N08NF2S"

It was not listed in the data sheet.

I'm sorry, but it would be helpful if you could tell me.

Thank you in advance.