Hi infineon 

Could you know that  AIMBG120R020M1 creepage distance shows high voltage only 800V?  but VDS support 1200V 

Any solution can confirm  support to 1200V ?

Thanks 

Hi Team,

Customer had IMW120R060M1H to replace wolfspeed C2M0080120D.

Customer have questions below question would like to clarify.

• From the graph below, the gate resistor is 100ohm. The negative current is around -0.8A. However, the MOSFET is very hot. They have tested with 10ohm gate resistor, but the negative current up to -2.3A observed. Will negative current spike of 2.3A cause any reliability issue to the SIC MOSFET?
• What is the max negative current the SIC MOSFET can sustain?
• If the negative current will cause reliability issue, how to improve the ringing?

The brightness below refers to the load level. 100% Brightness = full load, 10% Brightness =light load

Customer is using flyback controller to drive the SIC MOSFET.

MOSFET Waveform (Ch1=Vds, Ch2=Vgs, Ch4=Ids)

Fig.1 : 100% Brightness

Fig.2 : 40% Brightness

Fig.3 : 30% Brightness

Fig.1 : 20% Brightness

Fig.4 : 10% Brightness

Schematic (Output 350W 500V 700mA)

Hello IFXer,

Since trench gate SIC MOSFET has narrow nagative voltage window compare with planner gate SIC MOSFET.
we are care about the gate driver whether build in miller clamp and use zero voltage to turn off SIC MOSFET.
but there is all half bridge topology need use miller clamp function? please help advise.

hard switch: buck, boost, totem pole
soft switch: ACF flyback, LLC, phase shift full bridge

Dear Infineon team,

I have an issue with using Infineon Spice model in LTspice as shown in attached picture. I think it is about the setting up of Tj and T1 terminals for junction temperature and case temperature. 

The device I use is IPWS65R022CFD7A.

Could you please help me to solve this issue?

Many thanks.

Alex

Hello,

We are using the Power MOSFET IPB083N15N5LF in our power supply product.

I have a question on the safe operating temperature range measured on the package top face.

In our product the bottom tab is mounted on the heatsink.

When I measure the temperature at the package top face by using a thermocouple under the rated load, it is measured as 73℃ for the environmental temperature of 27℃.

Therefore we suppose that the temperature at the package top face under the rated load would be 96℃ and 117℃ for the environmental temperature of 50℃ and 71℃ respectively.

I wonder how much the Power MOSFET IPB083N15N5LF is safe when the temperature at the package top face is measured as 96℃ and 117℃ respectively.

Thank you for your guidance.

With regards,

 GKIM

Hello IFXer,

How to quantify the tpulse,positive<=1%dutycycle/fsw test condition for Vgs transient?
we compare other trench gate vendor, just show simple test condition such as tsurge < 300ns.

https://www.infineon.com/dgdl/Infineon-ApplicationNote_MOSFET_CoolMOS_P7_600V-AN-v02_01-EN.pdf?fileId=5546d4625b10283a015b14659d2d0e39

Figure 11　Simplified EOSS recycling mechanism in soft switching

If it's zvs, wouldn't Eoss be a heat loss?

thank you