MOSFET (Si/SiC) Forum Discussions
For Designing 7 KW isolated bi-directional DC-DC converter.
Why Phase shift Full Bridge (PSFB) is not well suited for bi-directional ?
Please suggest which topology will give better efficiency (~98.5) Like DAB or FB-LLC?
Show LessDear IFX,
May I know why Coss of SiC MOSFET just provide value at room temperature in datasheet? As I know the doping concentration effect the thick of depletion region of MOSFET. there is no effect by low/high temperature? why?
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I have the following circuit to drive a 3 phase BLDC motor, I'm using IRFB7730 MOSFETs, and an ED2184 to drive them, but somehow the High-Side MOSFET tends to fail and short itself. What I'm doing right now is trying out each phase step by step in a slow way, keeping the MOSFET high with no PWM, just trying from phase A-C, B-C, etc... Can this be the cause of my problem? Or can there be any other explanation for this? The motor is rated for 300W, so I think it isn't demanding that much current, or atleast enough to make the MOSFETs fail.
I wanted to add that I'm not doing the phase change sequentially, I'm just uploading the code to energize A-B, B-C and so forth but a single time per phase, so the phase A-B is turned on while I upload the code for the next phase.
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I think that Infineon's MOSFETs basically do not have a dv/dt capability.
If you have any DV/DT tolerance data for IPT111N20NFD, could you please disclose it?
IPT111N20NFD Data Sheet
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Show LessHi all,
We are using IMZA120R007M1H Sic Power MOSFET in our Design.
- we are switching Two MOSFETs Simultaneously, those two MOSFETs fixed to a common Base plate, in this condition how the temperature will rise between the MOSFETs.
- Like above shown in image MOSFETs are placed in base plate (75mmX90mmX15mm).
- By placing two MOSFETs in one base plate, weather the temperature of two MOSFETs will add increase the temperature or it will separate the temperature.
- In IMZA120R007M1H Data sheet Rth(j-a)=62K/W and Rth(j-c)=0.20K/W.
- How to convert this K/W to °C/W, please suggest any formula is available.
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IPP60R230P6 is obsolete. Can anyone suggest a similar replacement?
Thank you,
Jake
Hi,
May I know the life cycle status of below parts. Are these parts in production or NRND or Obsolete?
1. SMBTA13 (TRANSISTOR NPN 30V 0.3A SOT23)
2. BSP613PH6327XTSA1 (MOSFET P -60V 180mohm -2.6A SOT223 4)
3. CY7C65642-48AXC (Periph. USB Hub Controller 70?C TQFP 48)
Show LessWhen I simulated, the IRFP4110 gate was directly connected to GND, and the moment power was applied between the DS of the MOS tube, the ID was very large. ID=dV/dt*coss. Could this ID cause MOS damage, and is there any way to reduce this Id
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Show LessHey, due to limited availability, I'm trying to select a replacement for the IPA60R125CP N-channel MOSFETs which I'm using to repair a 110v domestic lighting/dimming circuit. These are packaged as TO-220 FullPaks.
The closest match I could find was the IPA60R120P7 - comparing the specs it seems like it could be used as a drop-in replacement. Does anyone have any advice on choosing this as a direct replacement for the older part? Are there gate drive or other considerations that I'm overlooking? Thanks.
Show LessI've been looking for a suitable transistor to transmit a 110MHz signal through a laser diode. However, despite searching for days, I haven't been able to find any transistors with switching times in the picosecond range. If anyone knows of such a component, I would greatly appreciate the information. It doesn't necessarily have to be a transistor; if there's anything capable of discriminating and outputting a 110MHz signal, please let me know. Thank you.
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