MOSFET (Si/SiC) Forum Discussions
I was using n channel power mosfet
by applying Vgs=12 V (in series with 1k resistor) , Parallel resistance between GS was 1K(for fast switching), Vds=50 V .
Mosfet was working fine till 5 Amp load & switching was too good but when I switched the load to 10 Amp ; the mosfet got blown up immediately. Testing scenario was within the specified range as per datasheet ; please let me know your valuable thoughts to rectify this problem.
Ankit SinghShow Less
Would like to seek your help to confirm if it is normal to have the physical shape of IRLR9343TRPBF (DPAK) different from the dimensions drawing provided on product datasheet. Attached the comparison for easier reference. Thank you.
i have a failures of a full bridge circuit, using 4 off IPB70N12S3-11, additionally protected by Fredfets, VS-12EWH06FN-M3..
it is the backbone to a HV pulse driver, producing ~+/- 400v pulse @ 200W max @ 100% duty, by stepping up a 250W 48V rail,and dilivery into a tuneable piezo transducer.
its switching at a varying frequency, 12-25khz, with varying duty cycle from 10 to 100% and a generous 1us deadtime.
im getting some failures of these fets, and i suspect dv/dt, and the deatime is more than sufficient, and there not even warm. the transformer is wound ~ 47 turns giving an inductance of ~ 10mH. there's rinining on the secondary, when open circuit, due to its massive 680mh inductance, but i dont this thats a contributor (can be easly cleaned up with a snubber load, i dont think it ringing can feed back to primary?). there is no feedback between input power and output power, its simply a driver.
Not being a PSU designer, more of a hv pulse forming background, is there something else i should consider apart from a possible dv/dt failure? - i can see no reference to a maximum dv/dt/ permitted slew rate for the FET. IPB70N12S3-11 on its datasheet.
the drivers are LTC4444 devices, half bridge devices. No failure or damage seen in these.
Anyone here is familiar with power adaptive MOSFET drivers?
I'm facing the challenge of building an old design based on poorly documented production data. Due to the age of the design, finding some parts has been sort of a nightmare. We've managed to get everything, but two components that haven't been produced for almost a decade.
Thus, I am looking for an alternative to the Si9910, ideally pin-identic. Any suggestions? The driver drives a SPP20N60S5 N-Channel MOSFET switching 400V with a frequency up to 8kHz.
If my search fails completely, my only alternative seems to be creating a small PCB fulfilling the function, and create some kind of adapter to position it on the component footprint, since changing the layout is not an option. Has anyone here have any experience doing this kind of thing in this trying times? All advice is welcome.Show Less
I'm using the auirfb8409 and I'm verifying the issue with the RDS deviation of this product.
RDS deviation of power FET depends on VGS.
What is the deviation of RDS mass production products for each VGS?
The L1 spice model for the switch IPB65R050CFD7A that is provided in Infenion's website is showng error while using running the simulation.
P.S : The error have been attached in the file.
Used tool : LTspiceXVIIShow Less
Hi, REF-DAB11KIZSICSYS is a good reference design for compact charger for 750V LVDC distribution but its output voltage range is too narrow for a universal charger. Can you suggest the best possible way to extend output voltage range to cover wide output.Show Less