Trise of Mosfet IRL60SL216 is too long

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hungtv84
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First question asked Welcome!

I'm currently using Mosfet IRL60SL216 trise in datasheet is only 180ns but when i use gate driver IR2110PBF, t rise measured is more than 1500ns as in picture, why is trise is so long, is datasheet or mosfet is fall?

 

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Meghana
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50 likes received 100 solutions authored 10 likes given

Hello @hungtv84 ,

Rise time should be measured between 90% value to 10% value of Vds during turn on event, which will be smaller than 1500ns. Yet if you see higher value than 180ns, then higher Rg could be the reason for it. Can you please share the Rg value that you are using in your circuit? 

The rise time 'tr' provided in the datasheet is measured at Rg=2.7ohm, Vgs=4.5V, whereas your circuit conditions are different.  

IR2110PBF is only capable of sourcing 2A peak. In order to reduce the rise time, we need to reduce the Rg value which in turn demands a higher peak current. 

IRL60SL216  has an internal gate resistance of 2ohm. So with Vgs =10V, the maximum Ig, that can be designed is 5A. Either you can choose a gate driver with a current capability of >5A or use a booster circuit additional to the driver. 

https://www.infineon.com/cms/en/product/power/gate-driver-ics/

https://www.infineon.com/dgdl/Infineon-External_booster_for_Driver_IC-ApplicationNotes-v01_06-EN.pdf...

Please let me know if you have further questions about this topic. 

Regards

Meghana R

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Meghana
Moderator
Moderator
Moderator
50 likes received 100 solutions authored 10 likes given

Hello @hungtv84 ,

Rise time should be measured between 90% value to 10% value of Vds during turn on event, which will be smaller than 1500ns. Yet if you see higher value than 180ns, then higher Rg could be the reason for it. Can you please share the Rg value that you are using in your circuit? 

The rise time 'tr' provided in the datasheet is measured at Rg=2.7ohm, Vgs=4.5V, whereas your circuit conditions are different.  

IR2110PBF is only capable of sourcing 2A peak. In order to reduce the rise time, we need to reduce the Rg value which in turn demands a higher peak current. 

IRL60SL216  has an internal gate resistance of 2ohm. So with Vgs =10V, the maximum Ig, that can be designed is 5A. Either you can choose a gate driver with a current capability of >5A or use a booster circuit additional to the driver. 

https://www.infineon.com/cms/en/product/power/gate-driver-ics/

https://www.infineon.com/dgdl/Infineon-External_booster_for_Driver_IC-ApplicationNotes-v01_06-EN.pdf...

Please let me know if you have further questions about this topic. 

Regards

Meghana R

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FanLee
Level 1
Level 1
5 questions asked 25 sign-ins 5 replies posted

Rg too large

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