Switch loss integral interval 开关损耗积分区间确定

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Yyjun
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请问你们对于SiC MOSFET的开关损耗积分区间是如何确定的?

How do you determine the switching loss integral interval of SiC MOSFET ?

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1 解答
Neo_Qin
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Hi @Yyjun 

As application engineers, we are not involved in product testing. As per my knowledge, the switching energy (Eon/Eoff/Etotal) provided in the datasheet were obtained by double-pulse test and are not theoretically calculated values.  More details about the double-pulse test ,please refer to the Infineon technical document shown below:

Double Pulse Testing: The How, What and Why 

Please note that the actual application conditions of the product may not be the same as the specific test conditions in the datasheet. Therefore, in some demanding situations, customers implement their own double-pulse tests to obtain more accurate switching loss. In less demanding situations, or when tests are difficult to implement, estimation can be done by simulation or manual calculation. Many end-customers also have their own experiences and tricks of the trade.

Sorry for the broken link previously, the new link shown as below:

Estimating switching losses for SiC MOSFETs with non-flat miller plateau region

https://ieeexplore.ieee.org/document/7931075

BR,

Neo

在原帖中查看解决方案

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Neo_Qin
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5 likes given 250 replies posted 250 sign-ins

Hi @Yyjun ,

SiC MOSFET的一个特征是其非平坦的米勒平台电压Vplateau。

在开通或关断转换过程中,Vgs在米勒平台区有近似线性的变化过程(Si MOSFET的Vp可近似为常数),显然,使用以下公式计算开关转换时间和开关损耗会引入更大的误差。

Neo_Qin_0-1706792797778.png

一些文献已经就此问题进行了讨论,其中,以下论文中介绍了一种使用数据表参数进行估算的方法,推荐您进行参考:

https://51.159.194.254/document/7931075?__cpo=aHR0cHM6Ly9pZWVleHBsb3JlLmllZWUub3Jn

BR,

Neo

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Yyjun
Level 1
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5 sign-ins First reply posted First question asked

Thank you for response.

And I would like to know if  switching loss integral interval in your product  datasheet calculated by this method? Or more specifically,how your DPT data is processed to obtain turn-on and turn-off losses?

(And your web I cannot open)

Any your help would be appreciated.

 

 

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Neo_Qin
Moderator
Moderator
Moderator
5 likes given 250 replies posted 250 sign-ins

Hi @Yyjun 

As application engineers, we are not involved in product testing. As per my knowledge, the switching energy (Eon/Eoff/Etotal) provided in the datasheet were obtained by double-pulse test and are not theoretically calculated values.  More details about the double-pulse test ,please refer to the Infineon technical document shown below:

Double Pulse Testing: The How, What and Why 

Please note that the actual application conditions of the product may not be the same as the specific test conditions in the datasheet. Therefore, in some demanding situations, customers implement their own double-pulse tests to obtain more accurate switching loss. In less demanding situations, or when tests are difficult to implement, estimation can be done by simulation or manual calculation. Many end-customers also have their own experiences and tricks of the trade.

Sorry for the broken link previously, the new link shown as below:

Estimating switching losses for SiC MOSFETs with non-flat miller plateau region

https://ieeexplore.ieee.org/document/7931075

BR,

Neo

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