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## Switch loss integral interval 开关损耗积分区间确定

Level 1
Level 1

How do you determine the switching loss integral interval of SiC MOSFET ?

1 解答

## Re: Switch loss integral interval 开关损耗积分区间确定

Moderator
Moderator

Hi @Yyjun

As application engineers, we are not involved in product testing. As per my knowledge, the switching energy (Eon/Eoff/Etotal) provided in the datasheet were obtained by double-pulse test and are not theoretically calculated values.  More details about the double-pulse test ,please refer to the Infineon technical document shown below:

Please note that the actual application conditions of the product may not be the same as the specific test conditions in the datasheet. Therefore, in some demanding situations, customers implement their own double-pulse tests to obtain more accurate switching loss. In less demanding situations, or when tests are difficult to implement, estimation can be done by simulation or manual calculation. Many end-customers also have their own experiences and tricks of the trade.

Sorry for the broken link previously, the new link shown as below:

Estimating switching losses for SiC MOSFETs with non-flat miller plateau region

https://ieeexplore.ieee.org/document/7931075

BR,

Neo

3 回复数

## Re: Switch loss integral interval 开关损耗积分区间确定

Moderator
Moderator

Hi @Yyjun ，

SiC MOSFET的一个特征是其非平坦的米勒平台电压Vplateau。

https://51.159.194.254/document/7931075?__cpo=aHR0cHM6Ly9pZWVleHBsb3JlLmllZWUub3Jn

BR,

Neo

## Re: Switch loss integral interval 开关损耗积分区间确定

Level 1
Level 1

Thank you for response.

And I would like to know if  switching loss integral interval in your product  datasheet calculated by this method? Or more specifically,how your DPT data is processed to obtain turn-on and turn-off losses?

(And your web I cannot open)

Any your help would be appreciated.

## Re: Switch loss integral interval 开关损耗积分区间确定

Moderator
Moderator

Hi @Yyjun

As application engineers, we are not involved in product testing. As per my knowledge, the switching energy (Eon/Eoff/Etotal) provided in the datasheet were obtained by double-pulse test and are not theoretically calculated values.  More details about the double-pulse test ,please refer to the Infineon technical document shown below:

Please note that the actual application conditions of the product may not be the same as the specific test conditions in the datasheet. Therefore, in some demanding situations, customers implement their own double-pulse tests to obtain more accurate switching loss. In less demanding situations, or when tests are difficult to implement, estimation can be done by simulation or manual calculation. Many end-customers also have their own experiences and tricks of the trade.

Sorry for the broken link previously, the new link shown as below:

Estimating switching losses for SiC MOSFETs with non-flat miller plateau region

https://ieeexplore.ieee.org/document/7931075

BR,

Neo