SiC vs IGBT

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User17759
Level 1
Level 1
First question asked First reply posted
Since I'm only starting to get acquainted with SiC but with quite some background knowledge on IGBTs, can somebody pls. briefly explain the differences of SiC compared to an IGBT (if that's possible...)
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Harmon
Moderator
Moderator
Moderator
First question asked Welcome! 5 replies posted
IGBTs and MOSFETs have only partial similarities, mainly in the control via a bias at the gate, which is a charge-controlled device. As a unipolar device, the CoolSiC™ MOSFET is in general thermally limited within its Safe Operating Area (SOA), thus the ZTH curve can be used to estimate limits.

Limits arising from a minority carrier dynamics which is known from an IGBT, e.g. a limited current handling capability at turn-off and high VDS, does not apply. Latch-up effects, turn-on of a bipolar pnp transistor, are suppressed by the high VBE (due to Vbi of SiC pn junctions) required to activate a parasitic bipolar transistor and by the low current gain of the SiC npn transistor.

FBSOA of a CoolSiC™ MOSFET is usually rectangular (pulsed operation, for VGS > 12 V)
RBSOA: turn-off with presence of many holes in the active areas of IGBT’s is not present in CoolSiC™ MOSFETs

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3 Replies
User17674
Level 3
Level 3
10 replies posted 5 replies posted 5 questions asked
Do you mean the difference between a SiC MOSFET and an IGBT ?
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User17759
Level 1
Level 1
First question asked First reply posted
Yes. Sorry for delayed answer. Was lucky to spend a couple of days off...
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Harmon
Moderator
Moderator
Moderator
First question asked Welcome! 5 replies posted
IGBTs and MOSFETs have only partial similarities, mainly in the control via a bias at the gate, which is a charge-controlled device. As a unipolar device, the CoolSiC™ MOSFET is in general thermally limited within its Safe Operating Area (SOA), thus the ZTH curve can be used to estimate limits.

Limits arising from a minority carrier dynamics which is known from an IGBT, e.g. a limited current handling capability at turn-off and high VDS, does not apply. Latch-up effects, turn-on of a bipolar pnp transistor, are suppressed by the high VBE (due to Vbi of SiC pn junctions) required to activate a parasitic bipolar transistor and by the low current gain of the SiC npn transistor.

FBSOA of a CoolSiC™ MOSFET is usually rectangular (pulsed operation, for VGS > 12 V)
RBSOA: turn-off with presence of many holes in the active areas of IGBT’s is not present in CoolSiC™ MOSFETs
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