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## SiC power MOSFET model simulation

Level 1
Level 1

I do AIMW120R045M1 SiC power MOSFET model simulation, and compare it with datasheet Ids vs. Vds characteristic diagram (please refer diagram below). You can see there is a larger error with the increase of Vds. How to correct this error to let simulation and datasheet data match?

1 Solution

## Re: SiC power MOSFET model simulation

Moderator
Moderator

Hello LIAO,

The Ids vs Vds characteristics provided in the datasheet are derived at Tvj=25C. L3 model also computes dynamic self heating, hence Tvj will be much higher than 25C at higher currents when Tc is set to 25C. Hence you observe this difference in the characteristics between simulation & datasheet.

If you wish to just analyze the characteristics of the device at different temperatures, you can use L1 model , where you can set the required device temperature in the analysis setup and derive the characteristics.

Attached is the application note, which explains the types of simulation models available for Infineon MOSFETs and their usage.

https://www.infineon.com/dgdl/Infineon-ApplicationNote_PowerMOSFET_SimulationModels-AN-v01_00-EN.pdf...

Kindly let us know the purpose of this simulation for us to provide further guidance.

Regards

Meghana

## Re: SiC power MOSFET model simulation

Moderator
Moderator

Hello LIAO,

The Ids vs Vds characteristics provided in the datasheet are derived at Tvj=25C. L3 model also computes dynamic self heating, hence Tvj will be much higher than 25C at higher currents when Tc is set to 25C. Hence you observe this difference in the characteristics between simulation & datasheet.

If you wish to just analyze the characteristics of the device at different temperatures, you can use L1 model , where you can set the required device temperature in the analysis setup and derive the characteristics.

Attached is the application note, which explains the types of simulation models available for Infineon MOSFETs and their usage.

https://www.infineon.com/dgdl/Infineon-ApplicationNote_PowerMOSFET_SimulationModels-AN-v01_00-EN.pdf...

Kindly let us know the purpose of this simulation for us to provide further guidance.

Regards

Meghana