SiC FET lifetime vs temperature

[iroth]

We're designing an inverter that uses the FF2MR12KM1 SiC FET. 

Can you provide an equation for the failure rate vs junction temperature?   Or simpler, what temperature would be consistent with a 10 year lifetime at continuous operation?   

The inverter is at near-sea level, so cosmic ray damage isn't a concern; the inverter is also operated continuously, so temperature cycling is also not an issue.  

Thanks!

[Abhilash_P · Accepted solution]

Hi,

   Thank you for posting on the Infineon Community. 

The failure rate or FIT ( failures in time ) can be calculated using the below formula which is based on JEDEC JESD85 standard, 

where, 

AF = Acceleration Factor
Ea = Thermal Activation Energy ( refer the below table )
k = Boltzmann’s Constant (8.63 x 10 -5 eV/K)
Tuse = Use junction temperature
Tstress = Life test stress junction temperature.

 

Regards,

Abhilash P

[iroth]

Hello Abhilash,

Thanks for the formula.  However, it's not enough to give failure rate, since the formula provides the scaling from the failure rate at a specific temperature.  Might you also be able to provide the failure rate of SiC FETs at a particular temperature, perhaps 125 or 150 degrees C?

Best regards, Ian

[Abhilash_P]

Hi,

   It mainly depends on the stress temperature. Can I please know this value?

And also let me know the part number of SiC.

Regards,

Abhilash P

[iroth]

Hello Abhilash,

We'll choose the power, and so the stress temperature, based on the failure rate.    Could you provide the failure rates at 100, 125, and 150 degrees C?  If that's too much, then just the failure rate at 125 degrees?  The part is FF2MR12KM1.

Thanks, Ian

[Abhilash_P]

Hi,

  For failure rate data please get in touch with the local FAE.

Regards,

Abhilash P