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MOSFET (Si/SiC) Forum Discussions

LIAO
Level 1
5 sign-ins First question asked First like given
Level 1

This is a SiC MOSFET AIMW120R045M1 switching characteristics test circuit:

LIAO_1-1659506476306.png

 

And AIMW120R045M1 switching characteristics SPEC:

LIAO_2-1659506563287.png

My question is how to setup Id=20A at Inductive load test circuit?

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Rachel_Gao
Moderator
Moderator 25 replies posted First question asked 10 solutions authored
Moderator

Hi 

Welcome to Infineon Developer Community,

As shown in figure E,we need to adjust switching on time(Ton) of DUT to achieve Id=20A,according to the formula: di=V/L*dt.   If you have any further questions,please contact me.

Best regards,

Rachel

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1 Reply
Rachel_Gao
Moderator
Moderator 25 replies posted First question asked 10 solutions authored
Moderator

Hi 

Welcome to Infineon Developer Community,

As shown in figure E,we need to adjust switching on time(Ton) of DUT to achieve Id=20A,according to the formula: di=V/L*dt.   If you have any further questions,please contact me.

Best regards,

Rachel