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MOSFET (Si/SiC) Forum Discussions

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How can IR25750 be used to sense the current in a low-side and a high side MOSFET?
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The IR25750 current sensing IC can measure the VDS (on) of a MOSFET or the VCE (on) of an IGBT. *You can read more about how to set up such an application circuit targeting either type of device in AN-1199.

The IR25750 targets only low-side MOSFET configurations.*The device could theoretically target a high-side MOSFET. *However, keep in mind that the output would then be a reference to the VS node which is a floating high voltage that would make the output unusable to anything referenced to GND as it would be a very high voltage because the output signal (CS) is referenced to the COM pin of the IC.

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Not applicable
The IR25750 current sensing IC can measure the VDS (on) of a MOSFET or the VCE (on) of an IGBT. *You can read more about how to set up such an application circuit targeting either type of device in AN-1199.

The IR25750 targets only low-side MOSFET configurations.*The device could theoretically target a high-side MOSFET. *However, keep in mind that the output would then be a reference to the VS node which is a floating high voltage that would make the output unusable to anything referenced to GND as it would be a very high voltage because the output signal (CS) is referenced to the COM pin of the IC.
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