IDN(實現的汲極電流)和 IDDC(連續EVAL_NLM0011_DC_RE汲極電流)

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您好,最近我在研究FF6MR12KM1H的數據表,但是我不太理解IDN(實現的漏極電流)和IDDC(連續EVAL_NLM0011_DC_RE漏極電流),有什麼區別?一般來說,我們只適用於 IDDC,並對應到 Rdson 或開關測試電流。 但是在數據表中,我看到了來自 IDN 的所有測試當前狀況。 我希望我的問題得到答案。

smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/IDN-Implemented-drain-current-and-IDDC-Continuous-DC-drain-current/td-p/668015

1 解決方案
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你好山姆,

IDN是指裝置的額定電流,而IDDC是理想測試條件下TLE9243QK_BASE_BOARD理論值(確保Tc始終為恆定值)。以下是計算公式供您參考:

TVJ-Tc = 普羅斯 * RTHJC,PLOSS = IDDC² * Rdson(ID,Tvj)

最好的問候,

瑞秋

 

smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/IDN-Implemented-drain-current-and-IDDC-Continuous-DC-drain-current/m-p/668080

在原始文章中檢視解決方案

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2 回應
Translation_Bot
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你好山姆,

IDN是指裝置的額定電流,而IDDC是理想測試條件下TLE9243QK_BASE_BOARD理論值(確保Tc始終為恆定值)。以下是計算公式供您參考:

TVJ-Tc = 普羅斯 * RTHJC,PLOSS = IDDC² * Rdson(ID,Tvj)

最好的問候,

瑞秋

 

smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/IDN-Implemented-drain-current-and-IDDC-Continuous-DC-drain-current/m-p/668080

0
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非常感謝!

smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/IDN-Implemented-drain-current-and-IDDC-Continuous-DC-drain-current/m-p/668165

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