I want to simulate the Tj of a MOSFET by reading the actual measured VDS and IDS switching waveforms using LTSpice.
The Infineon IGBTs have a description of the RC thermal model in the datasheet and can be simulated using this value, but CoolMOS and Optimos do not have this information and cannot be simulated thermally.
However, I look at the lib files provided on the web, I see the RC thermal model.
For example, IPB027N10N3 would correspond to the part in the red box below.
If I could extract this parameter, it would be possible to perform thermal simulation with VDS,IDS with real waveforms as well as IGBTs, but is it possible to extract only this parameter?
If there is a better way, I would appreciate it if you could let me know.
Thanks for posting your questions on this community.
Yes, you can use the Rth and Cth parameters for your original thermal simulation. The parameters are defined for Cauer model(The Rth and Cth in IGBT product are defined for Foster model).
Please find the following document in detail. Fig.2 in the document represents the internal model of the Spice file.