GATE current and Drive

[janysanko30]

Hello
MOSFET  " IPW65R041CFD "  with

CISS = 8400PF 

TR = 28ns

VGS = 10V

It needs 3 amps

and  IC = ICE2PCS01 with -1.5  2A  sink and source gate drive 

It doesn't seem to be able to drive the MOSFET in 28 nanoseconds

What are the disadvantages of putting a push-pull driver (bjt) at the output of the ic Drv?

[Daisy_T]

Below are some main disadvantages:

1. make the circuit more complicated since add more components, takes longer time to debugging;

2. more delay time between in and out and additional power loss;

3. additional components may also cause lower reliability in the total system

[Neo_Qin · Accepted solution]

Hi @janysanko30 ,

The typical value of Tr is measured under specific operating conditions, just a reference for practical application.

We do not recommend external discrete push-pull drive circuits. If you prefer a smaller Tr, the mainstream approach is to choose a MOS with better dynamic characteristics or use a dedicated driver IC.

On the other hand, higher rising/falling slopes may cause serious EMC problems, makes filter design more difficult.

More details please refer to the following URL：

600V CoolMOS™ CFD7 

Low Side Drivers 

Regards,

Neo