AnniLe wrote:
Hi all,
How to deal with EMI topics for these products?
Hi AnniLe,
EMI is always a tricky topic.
A substantial source of EMI in silicon-based systems (shape of the silicon pn junction-based freewheeling diode’s Irr curve) is eliminated by using CoolSiC MOSFETs.
Further EMI issues, arising from the fast switching behaviour, can have various sources, e.g. board design, parasitics etc. The chip itself creates additional EMI challenges due to fast switching. Possible countermeasures include:
- Improvement of the overall design, mainly symmetry is highly important
- Use of slew rate control at the gate drive to adjust the dv/dt during certain moments of the switching process
- Slowing down the chip via RG to the desired dv/dt"
Hope that helps - good luck with your design
