SiC MOS is a fast switching and sensitive component . High dv/dt, di/dt work together with the stray parameter will introduce the oscillation .
How to eliminate oscillation is the state of art , we can increase the gate resistor to decrease the dv/dt , di/dt in a proper value.
We can also minimize the gate Inductance loop to keep a small stray inductor , reduce the stray capacitor between the PCB layers…
IFX have several SiC evaluation boards, if necessary , you can also refer to the part of the design
https://www.infineon.com/cms/en/product/power/wide-band-gap-semiconductors-sic-gan/silicon-carbide-s...
