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MOSFET (Si/SiC) Forum Discussions

MaKo_4831421
Level 4
First like given 25 sign-ins 10 replies posted
Level 4
Device: IRF7749L1

1) Can we touch gate by prove directly?

2) How can we touch gate? Can we pull out the gate pattern from the side?

3)Is heat-dissipation only on the top surface?
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1 Solution
Abhilash_P
Moderator
Moderator 25 likes received 250 replies posted 250 sign-ins
Moderator
Hi,

The documentation for the solution is attached in this response.
https://www.infineon.com/dgdl/Infineon-IRF7749L1-DS-v01_02-EN.pdf?fileId=5546d462533600a4015356043d6...

5212.attach

Regards,
Abhilash P

View solution in original post

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3 Replies
SoU_4942226
Level 4
First like given First like received 25 replies posted
Level 4
1. The gate pin is placed on the reverse side. Therefore you can not touch gate directly.

2. Yes, you can touch gate from the pattern. But you should take care, the pattern has inductance. This inductance has capable to makes noise.

3. Both side Top and bottom. From the datatsheet, the bottomm side is more efficient than top side.
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TakashiM_61
Moderator
Moderator 750 replies posted 500 replies posted 250 solutions authored
Moderator
Dear SoU_4942226,
Thank you very much for your posting IFX Power MOSFET forum.

I have one request.
Could you please described the documentation which you referred to (including the link if available)?
This kind of information would be helpful for us.

It would be appreciated if you comprehend for this.

regards,
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Abhilash_P
Moderator
Moderator 25 likes received 250 replies posted 250 sign-ins
Moderator
Hi,

The documentation for the solution is attached in this response.
https://www.infineon.com/dgdl/Infineon-IRF7749L1-DS-v01_02-EN.pdf?fileId=5546d462533600a4015356043d6...

5212.attach

Regards,
Abhilash P
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