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WEN-YUNG
Level 3
Level 3
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Dear IFX,

May I know why Coss of SiC MOSFET just provide value at room temperature in datasheet? As I know the doping concentration effect the thick of depletion region of MOSFET. there is no effect by low/high temperature? why?

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Dipti_Kiran
Moderator
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First question asked 50 solutions authored 100 replies posted

Hi @WEN-YUNG ,

There is a negligible change of device capacitances w.r.t. temperature. Temperature influence is negligible and is not measured.

Regards,

Dipti

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Dipti_Kiran
Moderator
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First question asked 50 solutions authored 100 replies posted

Hi @WEN-YUNG ,

Coss of the MOSFET depends on Vds and hardly depends on temperature. Could you please share the datasheet with us for our reference?

Regards,

Dipti

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Dear Dipti,

I saw the Coss of IMZA65R048M1H just provide typ&max values at Tj 25degree.
based on following formu, the thick of Coss can be effect by doping concentration? if no, could you provide the test value for us and proof it to us to referance? at Tj 0 degree and 125degree.

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WENYUNG_0-1707276270997.png

 

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Dipti_Kiran
Moderator
Moderator
Moderator
First question asked 50 solutions authored 100 replies posted

Hi @WEN-YUNG ,

There is a negligible change of device capacitances w.r.t. temperature. Temperature influence is negligible and is not measured.

Regards,

Dipti

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