Hi Sir,
How to explain the high saturation drift Velocity(Vs cm/s x10^7) of Silicon carbide can operate in high frequency operation?
As I know the electron mobility: μn(cm2/VS) has following formula to explain NFET operate in high frequency operation.
Un is Mobility; L is channel length
Hello,
Thank you for posting on Infineon Community.
SiC MOSFETs are wide band-gap semiconductor devices, which gives the advantage of electronics to be smaller, run faster, and be more reliable. It can operate at higher temperatures, voltages, and frequencies than other semiconductors. While silicon has a bandgap of around 1.12eV, silicon carbide has a nearly three times greater value of around 3.26eV.
Coming to your question, the high-frequency switching in Silicon devices results in switching losses and heat generation problems. The intensity of these problems is less in SiC devices due to the improved electrical and thermal conductivity of the material and allows us to use SiC devices at high frequencies as compared to Silicon counterparts.
SiC features 10x the breakdown electric field strength of silicon, making it possible to configure higher voltage (600V to thousands of Volts) power devices through a thinner drift layer and higher impurity concentration.
Electron and hole mobilities (μ) characterize how quickly an electric field can accelerate the velocity of an electron or a hole (velocity = mobility (μ) × electric field (E)). Higher mobility (μ) means that an electric current flows more easily, resulting in lower resistance. The maximum velocity attainable is called the saturation drift velocity.
Attaching the standard rating available for SiC MOSFETs:
Please let me know if you need more information.
Regards,
Anshika
Hello,
Thank you for posting on Infineon Community.
SiC MOSFETs are wide band-gap semiconductor devices, which gives the advantage of electronics to be smaller, run faster, and be more reliable. It can operate at higher temperatures, voltages, and frequencies than other semiconductors. While silicon has a bandgap of around 1.12eV, silicon carbide has a nearly three times greater value of around 3.26eV.
Coming to your question, the high-frequency switching in Silicon devices results in switching losses and heat generation problems. The intensity of these problems is less in SiC devices due to the improved electrical and thermal conductivity of the material and allows us to use SiC devices at high frequencies as compared to Silicon counterparts.
SiC features 10x the breakdown electric field strength of silicon, making it possible to configure higher voltage (600V to thousands of Volts) power devices through a thinner drift layer and higher impurity concentration.
Electron and hole mobilities (μ) characterize how quickly an electric field can accelerate the velocity of an electron or a hole (velocity = mobility (μ) × electric field (E)). Higher mobility (μ) means that an electric current flows more easily, resulting in lower resistance. The maximum velocity attainable is called the saturation drift velocity.
Attaching the standard rating available for SiC MOSFETs:
Please let me know if you need more information.
Regards,
Anshika
