Aabout IMBG120R350M1H switching speed test

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MASK310
Level 1
Level 1
First question asked Welcome!

The IMBG120R350M1H is a great device, boasting one of the fastest switching speeds among SiCMOSFETs. According to the datasheet, the turn-on rise time reaches 0.7ns at 25°C! If true,  this device will be very useful for research in the pulsed power field.

However, my simulations with the SPICE model published by Infineon show that it is never faster than 1ns under the same conditions as the datasheet.

MASK310_0-1687363357788.png

What were the circuit conditions in your tests to achieve this switching speed? I look forward to an answer from the engineers.

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1 Solution

Hello,

Below are the testing conditions as requested by you. 

The test conditions are given in the datasheet table:

 

AZIZ_HASSAN_0-1688711622580.jpeg

 

Thanks,

AZIZ

 

 

Also, the test circuit configuration and the definition of the switching times are given on page 15 of the datasheet.

 

AZIZ_HASSAN_1-1688711622586.jpeg

 

View solution in original post

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2 Replies
AZIZ_HASSAN
Moderator
Moderator
Moderator
5 likes given 250 sign-ins 100 solutions authored

Hello MASK310,

I am looking at it. Meanwhile can you please share your result to see 1nsec. turn on time.

Thanks,

AZIZ

 

0 Likes

Hello,

Below are the testing conditions as requested by you. 

The test conditions are given in the datasheet table:

 

AZIZ_HASSAN_0-1688711622580.jpeg

 

Thanks,

AZIZ

 

 

Also, the test circuit configuration and the definition of the switching times are given on page 15 of the datasheet.

 

AZIZ_HASSAN_1-1688711622586.jpeg

 

0 Likes