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Is there any special consideration when using a pair of SiC or GaN FETs (compared to regular silicon FETs) in a common source configuration to create a solid state switch for 90 - 264 Vac Single phase 50/60 applications other then a providing a negative gate drive voltage for the OFF state?
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Dear @CHenze ,
For AC switch application, The control of the GaN FETs is not possible in 3rd quadrant operation. The behaviour is not same as the 1st quadrant and has huge voltage drops during the operation and may lead to higher losses.
Also GaN FETs does not have the inherent body diode. Hence, Common source configuration may not be feasible for your application. However, You can use SiC FETs in common source configuration. But for the mentioned voltage range usually SiFETs are recommended for your application.
Best Regards
Shivam
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Dear @CHenze ,
For AC switch application, The control of the GaN FETs is not possible in 3rd quadrant operation. The behaviour is not same as the 1st quadrant and has huge voltage drops during the operation and may lead to higher losses.
Also GaN FETs does not have the inherent body diode. Hence, Common source configuration may not be feasible for your application. However, You can use SiC FETs in common source configuration. But for the mentioned voltage range usually SiFETs are recommended for your application.
Best Regards
Shivam
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Thank You for the reply. It seems that SiC FETs have an efficiency advantage because the on-state resistance does not increase as much compared to a Si FET with the same resistance at 25C.
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Dear @CHenze ,
Considering the efficiency factor for your application if SiCFET matches your requirement.
You can opt for SiC FET as well apart from SiFET. It is mostly depends on the end application and user choice.
Best Regards
Shivam