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EM4user
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https://zhuanlan.zhihu.com/p/343356947

请问英飞凌的超结MOSFET在PBTI应力下会出现阈值电压先减小后增大的情况吗?

 

粉丝在这篇文章留下的问题,希望工程师解答,感谢😀

 

 

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Daisy_T
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@EM4user ,您好!

如文章所说,施加正栅极偏压应力(PBTI)时,通常可以观察到阈值电压向更高的电压偏移;而如果施加负栅极偏压应力(NBTI),阈值电压则向相反的方向偏移。并且在撤出施加电压之后,这个偏移会快速恢复。

 

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Daisy_T
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250 sign-ins 250 replies posted 25 likes received

@EM4user ,您好!

如文章所说,施加正栅极偏压应力(PBTI)时,通常可以观察到阈值电压向更高的电压偏移;而如果施加负栅极偏压应力(NBTI),阈值电压则向相反的方向偏移。并且在撤出施加电压之后,这个偏移会快速恢复。

 

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您好,我最近在研究Si MOSFET和SiC MOSFET栅极可靠性的问题,在一些低压的平面型后或沟槽栅型的Si MOSFET中,对其添加正栅极偏压应力其阈值电压会出现先减小后增大的趋势,而我对英飞凌的650V超结MOSFET做同样的实验却观察不到这样的现象,请问这是因为超结结构决定的吗?对于超结MOSFET是否不会出现先减小后增大的情况?

希望您有空可以指点一下,谢谢!🙏

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