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MOSFET (Si/SiC) Forum Discussions

ZhaiL
Employee
Employee
10 sign-ins 10 questions asked 5 questions asked

您好,请问为什么IPOSIM的SiC mos的损耗计算中,并没有计算二极管Diode的损耗呢?

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1 Solution
喜马拉雅之雪
Employee

Hi Zhail:

首先;SiC MOSFET的二极管是标准碳化硅二极管,反向恢复极快。对于IPM模块应用;开关损耗几乎为0.

其次;由于碳化硅二极管压降比较大(3.5V左右)且对RDSON有一定影响,不建议高比例的使用这个二极管,而采用同步工作模式(用MOSFET沟道续流)。因此;仅有死区时间有二极管通态损耗。比例极低。

因此;通常IPM在计算时;主要考虑SiC MOSFET损耗。精确计算时;可以用死区时间计算二极管损耗。

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6 Replies
Jingwei
Moderator
Moderator
Moderator
First question asked 100 replies posted 10 likes received

Hi,

可以提供一下使用的器件型号和仿真拓扑吗?

BR,

Steven

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您好!我是提问者。拓扑是三相两电平逆变器DC-AC_3P_2L,器件我试了FF8MR12W2M1_B11和FF23MR12W1M1_B11这两款SiC MOSFET,IPOSIM仿真里二极管的损耗显示的是Diode {notCalculated} 。 我看了数据表,表中并没有提供体二极管的反向恢复损耗,我猜测是把体二极管的反向恢复损耗算进了MOSFET的开通损耗?是这样吗?P1.pngP2.png

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Refer to the explanation below. A very good one.

BR,

Steven

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Jingwei
Moderator
Moderator
Moderator
First question asked 100 replies posted 10 likes received

或者是损耗计算截图,

谢谢

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喜马拉雅之雪
Employee

Hi Zhail:

首先;SiC MOSFET的二极管是标准碳化硅二极管,反向恢复极快。对于IPM模块应用;开关损耗几乎为0.

其次;由于碳化硅二极管压降比较大(3.5V左右)且对RDSON有一定影响,不建议高比例的使用这个二极管,而采用同步工作模式(用MOSFET沟道续流)。因此;仅有死区时间有二极管通态损耗。比例极低。

因此;通常IPM在计算时;主要考虑SiC MOSFET损耗。精确计算时;可以用死区时间计算二极管损耗。