您好,想请教一下DC-AC逆变器中SiC Mosfet和Si IGBT的额定电流裕量选择的差别!Hello, I would like to ask you about the difference in rated current margin selection between SiC Mosfet and Si IGBT in DC-AC inverter!

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Desheng_Zhang
Level 1
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5 questions asked 5 replies posted 10 sign-ins

举个例子,比如逆变器峰值输出电流指标为 100A,按照传统硅基器件Si IGBT选型方法应留一倍裕量,即选择 200A 额定电流的Si IGBT模块。但是 SiC 器件耐高温性能突出,选型SiC Mosfet时是否可以留较小裕量甚至不留裕量? SiC Mosfet模块的额定电流应该怎么选择?是大于等于100A 的即可满足要求,还是要留一倍裕量选200A?
For example, if the peak output current of the inverter is 100A, the traditional Si IGBT selection method should leave double the margin, i.e., choose the Si IGBT module with 200A rated current. But the SiC device has outstanding high temperature resistance, can we leave a smaller margin or even no margin when selecting the SiC Mosfet module? How should the rated current of SiC Mosfet modules be selected? Will the rated current greater than or equal to 100A meet the requirements, or should we leave a margin of 200A?

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yifei_y
Moderator
Moderator
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250 replies posted 25 likes received 100 solutions authored

使用100A的SiC MOSFET意味着零安全裕量,如果是一个商业项目,由很大风险。建议至少留20-40%的裕量。

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yifei_y
Moderator
Moderator
Moderator
250 replies posted 25 likes received 100 solutions authored

使用100A的SiC MOSFET意味着零安全裕量,如果是一个商业项目,由很大风险。建议至少留20-40%的裕量。

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