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MOSFET (Si/SiC) Forum Discussions

ZhaiL
Employee
Employee
10 sign-ins 10 questions asked 5 questions asked

SiC MOSFET导通电阻和什么有关,我看到相同电压电流等级的Rdson,SiC的比IGBT还大?

https://www.zhihu.com/question/362733174/answer/1134177732#comment-10410170422?notificationId=159614...

你好,咨询一个问题,正向导通和反向导通的Rdson特性会有区别吗,带上体二极管的情况?谢谢~

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Xiangrui
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50 solutions authored First question asked 50 sign-ins

Hi,

导通电阻取决于器件内部的结构(比如工艺水平,沟道宽度,掺杂浓度等)。但导通损耗不仅仅取决于Rdson,在小电流条件下,SiC MOSFET的饱和压降是要远小于IGBT的饱和压降的,因此导通损耗会更低。

正向导通的时候电流流经MOSFET,其内阻为Rdson。反向导通时电流流经二极管,此时电路中的电阻为Diode的内阻而不是Rdson。

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Xiangrui
Moderator
Moderator
Moderator
50 solutions authored First question asked 50 sign-ins

Hi,

导通电阻取决于器件内部的结构(比如工艺水平,沟道宽度,掺杂浓度等)。但导通损耗不仅仅取决于Rdson,在小电流条件下,SiC MOSFET的饱和压降是要远小于IGBT的饱和压降的,因此导通损耗会更低。

正向导通的时候电流流经MOSFET,其内阻为Rdson。反向导通时电流流经二极管,此时电路中的电阻为Diode的内阻而不是Rdson。

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