Community Translation: EiceDRIVER™ 1EDN TDIにおけるモチベーションは何ですか？(KA-01074)
Each time a power MOSFET is being turned on or turned off in an SMPS, parasitic inductances cause ground-shifts. These ground-shifts can lead to false triggering of the gate driver ICs. In consequence, this may generate electrical overstress in power MOSFETs and cause functional failure in SMPS. Infineons EiceDRIVER™ 1EDN TDI 1-channel low-side and high-side gate driver family overcomes these challenges. These products are developed to prevent false triggering of power MOSFETs in industrial, server and telecom SMPS, wireless charging applications, telecom DC-DC converters, power tools and solar micro inverters. Choosing Infineon’s best-in-class and reliable gate-driver ICs with truly differential control inputs translates into higher power density, more robust and more efficient designs at a lower cost than traditional solutions
