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SEMPER™ and S25FS-S flash memory devices register group structure vs standard memory products - KBA236397

SEMPER™ and S25FS-S flash memory devices register group structure vs standard memory products - KBA236397

Infineon_Team
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In previous flash generations, the register groups were a combination of nonvolatile, volatile, and OTP bits. The recent memory products, such as SEMPER™ and the S25FS-S family, have independent nonvolatile and volatile memory register cell groups. The following table compares the register structures between the flash memory families.

Table 1 Status Registers and Configuration Registers comparison table

 

Recently developed flash memory family (SEMPER™ and S25FS-S)

Previous generation flash memory family

Device Status

Status Register 1

STR1N[7:0], STR1V[7:0]

Status Register 1

SR1[7:0]

Status Register2

STR2V[7:0]

Status Register2

SR2[7:0]

Device Configuration

Configuration Register 1

CFR1N[7:0], CFR1V[7:0]

Configuration Register 1

CR1[7:0]

Configuration Register 2

CFR2N[7:0], CFR2V[7:0]

Configuration Register 3

CFR3N[7:0], CFR3V[7:0]

Configuration Register 4

CFR4N[7:0], CFR4V[7:0]

 

  • STRxN: Nonvolatile status registers
  • STRxV: Volatile status registers
  • CFRxN: Nonvolatile configuration registers
  • CFRxV: Volatile configuration registers

To access the new independent register groups, RDAR(65h)/WRAR(71h)/WRENV(50h) commands must be used with the addresses.

With the previous RDSR (05h Read Status Register) and RDCR (35h Read Configuration Register), users could only access a limited part of the registers resulting in limited features to operate flash.

The following table details the different supported commands for register access.

Table 2 Register related commands comparison

 

Recently developed flash memory family

Previous generation flash memory family

Related Commands

RDAR(65h)

RDSR1(05h)

RDSR2(07h)

RDCR(35h)

Read Any Register

Read Status Register-1

Read Status Register-2

Read Configuration Register-1

 

RDSR1(05h)

RDSR2(07h)

RDCR(35h)

 

Read Status Register-1

ReadgStatus Register-2

Read Configuration Register-1

WRAR(71h)

WRR(01h)

Write Any Register

Write Register (Status-1, Configuration-1)

 

WRR(01h)

 

Write Register (Status-1, Configuration-1)

WRENV(50h)

WREN(06h)

Write Enable Volatile

Write Enable

 

WREN(06h)

 

Write Enable

 

Read Any Register(65h) and Write Any Register(71h) are commands with address. Using the provided address table in each device’s datasheet, the user can read from or write to any nonvolatile and volatile registers.

Figure 1 Read Any Register Read Command Sequence

Infineon_Team_0-1676276323198.png

 

Figure 2 Write Any Register Command Sequence

Infineon_Team_1-1676276374525.png

 

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