MOTIX™ Gate Drivers: Gate driver characteristics during the first PWM period - KBA235412
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Jun 20, 2022
03:16 AM
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Jun 20, 2022
03:16 AM
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In a half-bridge application, when Pulse-width Modulation (PWM) is applied on High-Side MOSFET (HS MOSFET), the device is initialized and enabled.
When the first PWM arrives (see Figure 1), the following events can be observed:
- Initially before the first rising edge, HS MOSFET and Low-Side (LS MOSFET) are OFF.
- The HS MOSFET is turned ON after the first rising edge and the LS MOSFET is still OFF.
- The HS MOSFET is turned OFF after the first falling edge.
- After tCCP, LS MOSFET is turned ON.
Figure 1 External PWM Signal and generation of switching signals for HS and LS MOSFETs - Frame 1
Figure 2 shows the control signal of free-wheeling MOSFET switches from high to low at the rising edge of the external PWM signal, which is different from the first PWM period.
Figure 2 External PWM Signal and generation of switching signals for HS and LS MOSFETs - Frame 2
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