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MOTIX™ Gate Drivers: Gate driver characteristics during the first PWM period - KBA235412

MOTIX™ Gate Drivers: Gate driver characteristics during the first PWM period - KBA235412

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In a half-bridge application, when Pulse-width Modulation (PWM) is applied on High-Side MOSFET (HS MOSFET), the device is initialized and enabled.

When the first PWM arrives (see Figure 1), the following events can be observed:

  1. Initially before the first rising edge, HS MOSFET and Low-Side (LS MOSFET) are OFF.
  2. The HS MOSFET is turned ON after the first rising edge and the LS MOSFET is still OFF.
  3. The HS MOSFET is turned OFF after the first falling edge.
  4. After tCCP, LS MOSFET is turned ON.
BinduPriya_G_0-1655720005870.png

Figure 1            External PWM Signal and generation of switching signals for HS and LS MOSFETs - Frame 1 

Figure 2 shows the control signal of free-wheeling MOSFET switches from high to low at the rising edge of the external PWM signal, which is different from the first PWM period.

BinduPriya_G_1-1655720106404.png

Figure 2            External PWM Signal and generation of switching signals for HS and LS MOSFETs - Frame 2

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