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Key features and benefits of the 950 V CoolMOS™ P7

Key features and benefits of the 950 V CoolMOS™ P7

Infineon_Team
Employee
Employee
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Key features:
Best-in-class FOM RDS(on)* Eoss; reduced Qg, Ciss and Coss
Best-in-class DPAK RDS(on) of 450 mΩ
Best-in-class V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V
Integrated Zener Diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability

Key benefits:
Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature as compared to CoolMOS™ C3
Enabling higher power density designs, BOM savings and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns

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