IGBT Reverse breakdown voltage
In the Infineon IGBT device datasheet, the Vce specifies the lowest forward breakdown voltage limit based on statistical distribution out of IGBT mass production.
Usually, IGBT devices have some reverse breakdown voltage capability, but this reverse blocking capability is much weaker than the forward voltage blocking capability. Reverse voltage should be avoided to be subjected to IGBT devices.
The reverse breakdown voltage is not specified in IGBT devices datasheet as in most applications the load is inductive, a freewheeling loop must be provided for the inductive load when the IGBT device is turned off, a parallel diode can serve the purpose, the reverse breakdown voltage capability of the IGBT devices depends on the forward conduction characteristics of the freewheeling diode.