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Features of 200-300 V StrongIRFET™ devices

Features of 200-300 V StrongIRFET™ devices

IFX_Publisher2
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 -RDS(on) improvement when compared to previous generations, 30% @ 200V
- High-current carrying capability, up to 40% higher than previous generations
 - 175°C junction temperature rated
 - Gate, avalanche, and dynamic dV/dT ruggedness
 - Fully characterized capacitance and avalanche SOA
 - Industry standard footprint

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