Features of 200-300 V StrongIRFET™ devices
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Jun 29, 2022
02:21 AM
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Jun 29, 2022
02:21 AM
-RDS(on) improvement when compared to previous generations, 30% @ 200V
- High-current carrying capability, up to 40% higher than previous generations
- 175°C junction temperature rated
- Gate, avalanche, and dynamic dV/dT ruggedness
- Fully characterized capacitance and avalanche SOA
- Industry standard footprint
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