Community Translation: EiceDRIVER™ ゲートドライバIC:ハーフブリッジのハイサイドスイッチを駆動するためのデュアル＆シングルチャネル絶縁ソリューションのコンフィグレーション- KBA236402
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In continuation to KBA 236394, following section is discussed briefly.
This circuit consists of galvanic isolation technology and all the complex circuitry are incorporated in a single chip. This circuit is fast compared to pulse transformer and can provide few amperes of peak current. The Isolated GD IC is a channel gate driver IC shown in Figure 1.
Figure 1 Isolated channel gate driver IC block diagram
Infineon provides a competitive solution known as coreless transformer (CT) technology, which gives all the needed functionality and saves space. The two transformer coils are kept near to each other which does not require any core along with sufficient creepage and clearance distance. This CT technology have high current driving capability, high CMTI and less delay which makes it suitable for fast switching devices (high voltage MOSFET). One of this type is a dual channel gate driver(Dual channel IC) IC, that has high CMTI (>150 V/ns) which makes it more suitable and robust for devices like GaN, SiC and so on. These dual channels have additional functionality like short circuit protection, dead time control, overlap protection, which increase its reliability and flexibility. Due to less leakage inductance in gate path, noise issue is less in high-side switch transition.
In an isolated gate driver, there is another option of driving the half bridge by using a single channel isolated driver(single channel IC) for top switch and non-isolated driver for bottom switch. This configuration is used in a system, that requires only functional isolation.
The size of the complete half bridge driver solution will be less hence can be used where space constraint is a limiting factor. For example, it could be used in LLC converter, where reinforced isolation is not required when driving from the primary side.
Figure 3 Single channel isolated gate driver IC solution