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Calculate IGBT losses for a SPWM voltage source converter

Calculate IGBT losses for a SPWM voltage source converter

Infineon_Team
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In continuation of IGBTs: Loss calculation and junction temperature estimation for an SPWM voltage source converter, please read it before going through the content in this document.

A three-phase IGBT-based voltage source converter

 

A three-phase IGBT-based voltage source converter comprises three identical legs for three phases. The current and voltage waveforms in each phase are the same with a phase lag. Therefore, conduction loss and switching loss can be calculated keeping a single phase in mind, as shown in Figure 1.

Figure 1: A phase leg of three-phase voltage source converter

 

Infineon_Team_9-1668515173234.png

 

Total converter losses can be calculated by multiplying it by three. If i(t) > 0, T1 and D2 in Figure 1 are operational. The current waveforms for T1 and D2 can be seen in Figure 2 and Figure 3 respectively. Therefore, if i(t) > 0, calculate the power losses of T1 and D2 during the positive half period.

Figure 2: IGBT (T1) current waveform in a VSI

Infineon_Team_10-1668515243677.png

 

  Figure 3:  Diode (D2) waveform in a VSI

Infineon_Team_11-1668515283773.png

 

Because the IGBT junction temperature is almost constant during one period, it can be assumed that the junction temperature is maintained constant during the calculation.

Figure 4: SPWM scheme

Infineon_Team_12-1668515334409.png

 

Assuming the converter is working in linear modulation mode with modulation index m, frequency ω, phase lag between ac voltage and current Փ, dead time td as in Figure 4, the conduction time of the IGBT (T) and diode (D) during one switching period Ts can be calculated as follows:

Infineon_Team_13-1668515393388.png

 

 

 

Assuming the current equation as:

Infineon_Team_14-1668515426291.png

 

 

IGBT conduction loss for one switching period can be written as:

Infineon_Team_15-1668515473909.png

 

Infineon_Team_16-1668515502917.png

 

 

 

 

Equation (6) can be re-written as:

Infineon_Team_8-1668515135099.png

Where

Infineon_Team_7-1668515105019.png

And

Infineon_Team_6-1668515083547.png

 

 

VCE0 and RT can be determined from the device datasheet, as shown in Figure 1.

Similarly, diode conduction loss is calculated as:

Infineon_Team_5-1668515038853.png

Where

Infineon_Team_4-1668515000150.png

And

Infineon_Team_3-1668514976483.png

See the device datasheet to calculate Vd0 and RD value.

IGBTs switching loss over one switching period is:

Infineon_Team_2-1668514955088.png

Assuming the junction temperature to be constant over one period of the output waveform. VDC is also constant during the switching period, and the switching loss depends on the IC variation. The device’s current waveform is shown in Figure 3.

Let fs be the switching frequency, then IGBT switching loss and anti-parallel diode reverse recovery loss can be written as follows:

Infineon_Team_1-1668514877178.png

                                                                                                                                        

EOn, EOff, and Erec can be determined from the device datasheet at the average current value calculated from Equation (8). IGBT switching loss and diode reverse recovery energy loss can be calculated as follows:                                                                                                      

Infineon_Team_0-1668514804650.png


Note:  See the KBA236569 for an example of IGBT loss calculation for a SPWM voltage source converter using the Infineon IGBT FF1200R12IE5P.

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