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Advantages of CoolSiC™ MOSFET 1200V compared to Si-based switches

Advantages of CoolSiC™ MOSFET 1200V compared to Si-based switches

Infineon_Team
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In comparison to traditional Si-based switches like IGBTs and MOSFETs, the CoolSiC™ MOSFET 1200V offers a series of advantages. These include: the lowest gate charge and device capacitance levels, no reverse recovery losses of the internal-commutation-proof body diode, temperature-independent low switching losses and threshold-free on-state characteristics.

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