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AURIX™ MCU: Difference in retention time of program flash and data flash – KBA235019

AURIX™ MCU: Difference in retention time of program flash and data flash – KBA235019

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AURIX™ MCU: Difference in retention time of program flash and data flash – KBA235019

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In AURIX™ MCUs, program flash has 20 years of data retention time while the data flash has 10 years. Because the program flash is written only a few times or maybe only once during production while data flash is written continuously in some applications. Both flash types use different technologies, so the retention time is also different.

Note that the 10-years data retention for data flash is valid only in the case of data written once and never updated again.

Table 1 Flash target parameters for TC29x

Parameter

Symbol

Values

Unit

Note / test condition

Min.

Typ.

Max.

 

 

Program flash retention time, sector

tRET CC

20

-

-

years

Max. 1000 erase/program cycles

Data flash endurance per EEPROMx sector

NE_EEP10 CC

125000

-

-

cycles

Max. data retention time 10 years

Data flash endurance per HSMx sector

NE_HSM CC

125000

-

-

cycles

Max. data retention time 10 years

 

Note: This KBA applies to the following series of AURIX™ MCUs:

  • AURIX™ TC2xx series
  • AURIX™ TC3xx series
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