IGBT Forum Discussions
請問,因公司買了一個模組需測,看了資料發現需安裝Hybrid kit software,但在INFINEON的網方網站找不到,爬文之後才發現,需要有人授權後才能下載安裝,但找了一下聯落方式發現不知道該怎麼下手,請問可以和誰聯落開啟授權呢? 感謝
Hello all,
I have used the spice model of Infineon IGBT in the MATLAB-Simulink through subcircuit to ssc function.
NOw that gives an error, because of some issues. I have tried to convert the spice model MATLAB-Simulink through subcircuit to ssc function. and it is also having errors. This might be due to the completely changed parameter notation in IGBT spice files.
Looking forward to the suggestions or different spice files. I tried to use the TO-247 4pin IGBT spice files.
For information error message is:
Error using spiceNetlist2String
Unable to access IGBT_1200_HS3_L.lib.
Error in subcircuit2ssc
Error in subcircuit2ssc (line 31)
subcircuit2ssc(netlist,target);
Error in igbt_1200 (line 1)
subcircuit2ssc('IGBT_1200_HS3_L.lib','+IGBT_HS_ckt' );
Hi,
I am currently working on PLECS Simulink platform about an inverter model using your SiC IGBT with parallel diode PLECS model (IKZA75N120CH7), I am confused about the thermal chain setting in the thermal model.
When I simulink my PLECS model, it is weird that the circuit seems to need infinite time until it can reach the stable state, I searched a lot and found out the problem is due to too high thermal capacity (C) in your thermal model. As you can see from following pictures, the original thermal chain is Foster type, I changed it into Cauer type according to the advice from PLECS Userform, it can't influence the results of simulation. However from that Cauer type we can clearly see that the last 2 thermal capacity (C) is too high to cause thermal time constant of circuit too long though the thermal resistance is relatively low.
So I would like to ask, is there any reason behind setting the thermal capacity so low? Since so low thermal capacity means too high a thermal time constant, the circuit actually can't reach a stable state, so the simulation results are also not so accurate, right? Because of corresponding thermal resistance of last 2 columns is very small, so I guess it won't influence the finally junction temperature a lot. Can I just delete the too high thermal capacity columns , then the thermal time constant is suitable and the circuit can reach a stable state easily.
Thanks a lot for your answer and help.
Best regards,
Joy
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Dear all,
I'm a college student and I need to do some analysis in LTSpice to design a Gate Driver for IGBT FF1700XTR17IE5D. I know there won't be a spice library for dual igbt. Can you guide me how to create IGBT FF1700XTR17IE5D from 2 single igbt and please give me the spice library of 2 single igbt that you suggest?
Thank you in advance for your time and consideration. Have a nice day!
Show LessWhile in the midst of integrating the Speakatoo API into my project, I've encountered an error pertaining to cookies. I'm reaching out to seek assistance in resolving this issue. Any guidance or support from the community would be highly valuable and appreciated.
Show Less请问在使用STM32代替XMC1300提供PWM时,如何对4个栅极驱动子卡进行model的选择和设置?
I did an Iposim simulation 7/3/2023 and now when I re-run it the results are different.
Here are the inputs (exactly the same both times)
Topology: DC/DC boost (module)
Device selected: FF1400R12IP4
Input voltage: 457 V
Output voltage: 681 V
Output current: 300 A
Mode: Continuous
Input inductance 0.00022 H
Switching freq: 5000 Hz
Cooling condition: Fixed temp heatsink at 65°C
Switch Q1 RGon : 1 Ohm
Switch Q1 RGoff : 1 Ohm
The results were:
07/03/2023:
Hello everyone,
My question is if there exist an IGBT transistor able to switch an inductive load of 1 ohm with extremely low frequency (10 Hz or less) at 350V, or even more, to 700V.
My purpose is to replace a DC-DC SCR discharge circuit with an IGBT, to be able to control the period of the repetitive single pulses (10ms) in a practical manner, just as any igbt or mosfet could drive, but this time with hundreds of amps.
I already tried 350V 2 ohm with many Infineon power discrete IGBTs that say that are capable of switching 600 or 750V and 200A pulsed or more (1 ms) at the absolute maximum package ratings, but all fried at the tenth pulse or so. At this moment I didn't spend more money on IGBT modules because I want to be sure of the FBSOA, but it seems that the module series datasheets always omit that part, contrary to discrete series.
Thanks in advance, and congratulations for all the effort and technology that you Infineon are bringing to us 🙏
Show LessBonjour,
je souhaiterais savoir si le IHW30N160R5 est un bon équivalent du IHW30N160R2 ?
Merci.
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