IGBT Forum Discussions

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The driving current is too high, and the charging speed of the IGBT's capacitor increases, causing the IGBT to turn on faster, so that the driving circuit generates a larger di/dt that can easily cause gate voltage oscillations under the influence of parasitic inductance. When the voltage peak of the gate oscillation exceeds the VGE spec of the IGBT itself, it is easy to cause the IGBT to fail. My question is, how do I find the maximum driving current of an IGBT device? When IGBT is turned on, apart from the current rise phase, the reverse recovery effect of the diode should be taken into account. Shouldn't the driving current be higher and the loss lower at all other times? So should the upper limit of the driving current be EMI or the oscillation voltage of the gate?

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What simulation software can be used to observe the very detailed IGBT switch waveform, and finally the one that can set the IGBT shell temperature

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