Hello!

My name is Junior and I am carrying out a simulation in the Plecs software that reports errors that may originate from the values entered in the parameters of each semiconductor switch. Therefore, I attached the datasheets to this question and would like someone's help to fill in the values for each key.

1) In IGBTs I need to fill in values in the fields in the figure below:

2) In IGBTs I need to fill in values in the fields in the figure below:

3) In the body diodes, I need to fill in the fields in the figure below with values:

4) In the body diodes, I need to fill in the fields in the figure below with values:

5) For diodes that operate alone, I need to fill in the fields in the figure below with values:

6) For diodes that operate alone, I need to fill in the fields in the figure below with values:

Thank you very much for any help that can be provided.

Best Regards.

Could you please answer the following question we received via social media?
Question: What is the use this module?

Thank you

Hi

Please can some IGBT Gurus clarify the trouble I am struggling  since a while?

I thought I can find the solution here in manufacturer site hopefully.

I have bunch of same type IGBT Modules 1200V 75A type for repairing work.

Once triggered with a Vge of 12V and then Vge source removed(gate floating, electrrically open), group of them keep conducting till Vds removal, while the other group goes OFF slowly in 3-4seconds just after Vge removal.

With Vge signal connected, they can be set ON and OFF state as expected.

Which is behaving correctly, can someone please clarify that strange behaviour please.

The rest of all readings are identical.

Thanks.

Hello,

We are facing some problems with our inverter circuits using the IGCM10F60GA and IGCM15F60GA modules. Both modules appear to burn on the exact same spot, as you can see at the pictures below. When this occurs, the shunt resistor too always blows (we are using the 1-shunt application).

Could you tell us please wich parts of the module circuit (eg.: the boostrap section, or the logical section of the module) is located at this region that blows up? It will be of great help to us finding what is wrong with our application.

Of nearly 400 inverters we built as of today, we are talking about 60 failures, wich we consider totally abnormal. When we analyse the damaged modules, usually the low side of two legs is short-circuited between the respective N power pins (eg: U shortened to NU, W to NW). Sometimes the high side is shortened too (when this occurs the damage to the board is impressive).

The power circuit is shown below. We drive a 1/2hp 3-phase motor using the inverter circuit. The C77 and C78 are capacitor arrays (1nF as suggested in the AN2016-11). The power rating of the shunt resistor is 10W.

Here you can see the damage on four different samples of damaged modules. The module "explodes" always on the same spot.

Dear Infineon partners,

For IKW75N65ES5 ,Information related to wafers(Production location、shelf life etc. )

Need your help to urgent support~

Thank you so much!

Hi,

kindly advise the closer alternate part for FS20R06VE3.

The PCN indicate no direct replacement.    

Dear all,

I'm a college student and I need to realize some analysis in LTSpice to design a Gate Driver for the IGBT FF400R12KT4P. I couldn't find its Spice .lib model neither in the component's page nor in the Simulation Model Finder (https://www.infineon.com/simulation).  Can you please help me to get this Spice model file or any dual IGBT Spice model file?

Thank you in advance for your time and consideration. Have a nice day!

Hi ,

I am reading your application note of " InfineonApplicationNote_PFCCCMBoostConverterDesignGuide-AN-v02_00-EN: 

in that regarding inductor selection application note stated that - " In this evaluation board design, a 60 μ permeability Kool Mu core from Magnetics Inc. is used. It consists of two stacked of “Kool Mμ” 77083A7 toroids cores from Magnetics Inc., with 64 turns of 1.15 mm copper wire"

I am little bit curious about details calculation of number of turns specially for two stacked core, I did some study that says in parallel stacking of two cores inductance is doubled mean length of magnetic core is remain same  and area of cross section is double is it correct ?

Can I use following formula to calculate number of turns 

L = ((u0 * ur* N^2*A) / l)

where u0 = permeability of free space , ur = relative permeability of core material , N = Number of turns , A = cross sectional area of core and l = mean length of magnetic path