IGBT Forum Discussions

Is the FF2000XTR17IE5 able to operate with 6879A for 15ms at Tvj = 125°C?

I calculated with the limit load integral 710kA²s (datasheet).

--> I = √(710kA²s/15ms) = 6879,9A

Is the calculation correct?

Good evening:

Why can the power loss under actual working conditions be converted according to the curve in the datasheet when calculating the loss?

For example, 135 ° loss can be linearly converted according to 125 ° and 150 ° loss.

But these curves are not linear.

THANKS!

Hi community,

There can be typically two cases for IGBT power modules with bondwires.

1. Direct sense wire on semiconductor for Vce measurement 

2. No direct sense, but sense of Vce on DCB through load bondwires

During Rth measurement (Rth=Tvj-Tc/Ploss), Ploss is directly dependent on current and on-state voltage drop Vce.

My question would be, 

From above two cases, Case 1 Vce measured will be slightly lower than Vce measured during case 2 because, Vce in case 2 also includes load wirebonds drop. Therefore Rth_case 1 will be slightly higher than Rth_case 2.

Which one of this is correct? Any inputs on this is highly appreciated. Thank you. 

目前使用一款型号为IGBTFF400R33KF2C IGBT 做的全桥逆变
这是连接图

这是驱动波形    使用的是15V驱动  —9V关断驱动电路
100hz下

当母线电压为1200V时 IGBT输出波形

                                              过冲较大 
  
疑惑：
1.母线过冲 回路杂散电感大  
2.是否因为直流侧没有吸收电容
3.添加母线电容是否对减缓过冲有帮助
4.对于全桥逆变 IGBT使用铜排是否比排线连接 效果更好

请各位大牛 给出宝贵意见和建议     谢谢各位🤝

Hi all,

I am redesigning an HBridge that currently uses old Behlke high voltage switches and want to use a stack of MOSFETs or IGBTs.  I have need to make all forms of half and full bridges with up to about ±4KV, but starting with ±2000V.  There is really only one place to get a 4500V IGBT, but I'd like to have a stack I can scale up and down.  I have a circuit built using a (4) 4500V IGBTs in a full bridge and it works OK so far using a PWM driver.  

Are their devices out there to facilitate "stacking" of MOSFETs? Or designs that work well? I was looking at the high/low side drivers that can switch at the same time, wondering if I can provide different isolated supplies.  For example if I want (4) MOSFETs in series for one leg of the bridge, each needs a floating supply to hold the Gate voltage. I was curious if I could use a "master" PWM device and feed VOA and VOB to a stack of simpler drivers.  I do like the warm fuzzy of direct driver controls over external coils, etc.

I am involved in high voltage Pockels Cell development that requires high voltages, and we currently have ancient Behlke switches (~10kV) and figure these days I should be able to do this with a couple of MOSFETs, and be scalable and flexible to have more choices in MOSFETs to optimize rise times and such for each project.  The IGBT circuit does work, but appears slower than MOSFETs.  I need the fastest rise/fall times I can get to a steady state voltage.  I run up to 2KHz.

Maybe I am overthinking it, but toss me a schematic or link please! Thanks for any feedback!

Steve

Hi,

We are developing 1.5KW 2 level inverter with VFD drive for induction motor speed control. We need to select the IGBT or MOSFET for this application. Currently we are using the IGBT, Part No: IKW25N120CS7. While running around 2 hours the inverter temperature is rising upto 90 deg Celsius. We are using heatsink also, Size: (220mm x 180mm x 50mm). Specification details given below for your reference. Kindly support us to select the proper IGBT/MOSFET to reduce the Long run temperature rise. If you required any more details we will send you.

Application: Blower motor

Motor Type: AC Induction

Motor Spec: 3Ph, 415VAC, 50Hz, 2HP

Inverter Spec:

Input: 750VDC,

Output: Variable Output Voltage(40VAC to 435VAC) & Frequency(5Hz to 53Hz), SPWM

Switching Frequency: 4KHz

Kindly support us. Thank You

Regards,

Balaji.B