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Rakeshelct
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I am working on IPOSIM to understand IGBT junction temperature stress. Regarding "predefined Heatsink" with cooling method Water, it has Rth hs (K/W), is this per IGBT or diode or combined module case to ambient?

Thank you!

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BandaruAkhil
Moderator
Moderator 50 sign-ins 25 replies posted 10 solutions authored
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Hi @Rakeshelct 

Thanks for posting on the Infineon community page.

The mentioned Rth is for heat sink per IGBT and Diode.

BandaruAkhil_0-1653030523037.png

 

Best Regards,

Akhil Kumar.

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BandaruAkhil
Moderator
Moderator 50 sign-ins 25 replies posted 10 solutions authored
Moderator

Hi @Rakeshelct 

Thanks for posting on the Infineon community page.

Thermal resistance (Rth) is mentioned per IGBT and diode. Please do refer to the datasheet for values. IPOSIM

also considers the same.

 

Best Regards,

Akhil Kumar

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Rakeshelct
Level 1
First like given First reply posted First question asked
Level 1

Hi Akhil,

Datasheet specifies about IGBT module, my question is related to external Heatsink (on which IGBT module is placed) "cooling condition" under IPOSIM.

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BandaruAkhil
Moderator
Moderator 50 sign-ins 25 replies posted 10 solutions authored
Moderator

Hi @Rakeshelct 

Thanks for posting on the Infineon community page.

The mentioned Rth is for heat sink per IGBT and Diode.

BandaruAkhil_0-1653030523037.png

 

Best Regards,

Akhil Kumar.

Rakeshelct
Level 1
First like given First reply posted First question asked
Level 1

Ok, now I got this.. For 6 switch module, i need to apply factor 6 on the overall heatsink Rth value. Thanks!

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