How does Iposim model FF2MR12W3M1H_B11 half bridge in boost simulation? Sone anomalous results.

[Rchapman]

We are having trouble interpreting the Iposim simulation of this (FF2MR12W3M1H_B11) SIC half bridge module in a boost configuration. The results refer to "diode" switching losses being "not calculated". Is the simulation assuming we are leaving the top switch off and using the diode? If so - why doesn't it calculate the diode switching losses? If not, Where are the top transistor losses?  And there are some anomalous results. We find if we reduce the boost inductance - the transistor total dissipation goes down but its junction temperature goes up.

Here is our model:

https://iposim.infineon.com/application/en/results?simulationType:steady-state,topology:DC-DC_Boost,...

Any advice appreciated...

Richard.

[Guru_Prasad]

Hello @Rchapman 

Thanks for posting your question in the Infineon community.

we are working on this query we will get back to you 

Thank you

Guru

[Guru_Prasad · Accepted solution]

Hello @Rchapman 

The SiC half module can use for the Boost application. it can be replaced with a  boost switch and boost diode. unfortunately, the IPOSIM can validate only switch losses and its anti-parallel diode losses, not boost converter diode losses. so in your application, the switch anti-parallel diode is not conducting that is why losses are not calculated. Since the IPOSIM can do only switch calculations, not for diode hence upper switch losses are not shown. 

Thanks

Guru