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SiCk
Level 1
Level 1
5 sign-ins First question asked Welcome!

您好,英飞凌,在哪里可以查询IMW120R030M1H(1200 V,56 A)n沟道SiC沟槽MOSFET的集电极电流,导通电压和结温的关系数据。

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喜马拉雅之雪
Employee

这粒是碳化硅MOSFET,是典型多子导电器件,翻译成压降术语:漏源极压降等于导通电阻与电流的乘积。

关于不同结温与导通电阻关系,见数据表第十页图九。

_0-1670490429490.png

 

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喜马拉雅之雪
Employee

这粒是碳化硅MOSFET,是典型多子导电器件,翻译成压降术语:漏源极压降等于导通电阻与电流的乘积。

关于不同结温与导通电阻关系,见数据表第十页图九。

_0-1670490429490.png

 

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Hi,

Since, there no reply from the customer for long, I will close this ticket. In case, you have further doubt, please raise a new ticket.

BR,

AZIZ

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