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Hello,
We are using the S70KL1282 HyperRAM chip with the i.mx rt 1064 and for now we've only been using the IP Bus. We've managed to read all registers on the part shown below:
FlexRAM Config Reg0 - Die 0: 0x8f2f
FlexRAM Config Reg0 - Die 1: 0x8f2f
FlexRAM Config Reg1 - Die 0: 0xffc1
FlexRAM Config Reg1 - Die 1: 0xffc1
FlexRAM Die Manuf - Die 0: 0x3030
FlexRAM Die Manuf - Die 1: 0x3030
FlexRAM ID Reg0 - Die 0: 0x0c81
FlexRAM ID Reg0 - Die 1: 0x4c81
FlexRAM ID Reg1 - Die 0: 0x0001
FlexRAM ID Reg1 - Die 1: 0x0001
I've hooked up a scope and writing the data all seems correct, however on the read I am always getting 4 bytes of "garbage" data, in this case 0x0051dd5d. I've mostly been trying to read/write from memory address 0, but it seems I always get the "garbage" bytes with any memory address. Any help or suggestions on where to go would be appreciated.
Show LessCan i know where to find IBIS ver5.0 model (with power aware feature) for S27KS0643? Thank you!
Are there IBIS models available for S27KS0642GABHV020? I've been searching through the website and unable to find any.
Hi,
Could you please provide the IBIS model for S70KS1281DPBHV020?
Best Regards,
Kumada
Hello,
I'm using this part in my design S70KL1283GABHB020.
Could you please share design guidelines, reference schematic, and simulation model for this part?
Show LessWe are looking for a way to integrate external RAM (possibly as large as 16MB) in our Project. Right now, we can only use Quad-SPI to connect the RAM-IC to our µC.
After looking at the Datasheets for the S27-Series, I haven't found a possibility to set the ICs up for a Quad-I/O-Mode.
Can you confirm that, or is there a way that i have overlooked?
The Exelon F-RAMs seem to be compatible with QSPI, though the Memory Density is not as large as we might need it.
Is there another product, that we could use?
Thank you and regards,
Fabian
Show LessHi,
we are using two S27KS0642 as ping-pong buffers for a USB3 application (commercial temperature)
We will be driving them to their performance limits (so the full 3.2Gbit/s).
In order to achieve the maximum performance and reduce complexity we would like to violate the Tcsm.
(I understand, that this should be possible as long as we ensure the refresh of all cells)
Our major scenario will be the following:
1. Write the complete memory
2. Read the complete memory within 40ms maximum
3. (Possibly) read the complete memory again within 40ms maximum
As far as I understand the behavior of the memory it should be fine to violate Tcsm as long as we ensure, that the complete memory is read/written within 64ms.
Am I correct with that assumption or are there any problems to expect?
We have a second scenario (USB2.0/1.0 fallback) that will be:
1. Write the complete memory (ignoring Tcsm)
2. Read the complete memory in smaller junks honoring Tcsm
I would assume, that writing the complete memory will cause a complete refresh and that afterwards the self refresh operation will start running as before?
Best regards
Bernhard Wörndl-Aichriedler
レジスタをRDする際にデーターシートではレイテンシなしと理解したのですが、
シミュレーションモデルではレイテンシがあるようです。
ここの仕様はどのようになっているのでしょうか?