Hyper Flash Forum Discussions
Does CYPRESS have this kind of Read-While-Write (RWW) feature flash ? https://www.macronix.com/en-us/about/news/Pages/Macronix-Read-While-Write-(RWW)-Flash-Now-Adopted-by-Renesas%E2%80%99-Automotive-Instrument-Cluster-RH850D1M1A-MCU.aspxShow Less
We're using S27KS0641DPBHV020 and S26KS256SDPBHV020 in our design and wanted to ask if Cypress provide symbols and footprints for these devices for OrCad. Thanks.
I will use a HyperFlash memory from S26KL series at 100MHz clock rate (becose of my 3V3 power supply).
What are the impedance maching requirements ?
Is Pull-up of DQ / RWDS required?
In P.25 [7. Interface States] of the following materials, it is stated that DQ / RWDS is in High-Z state during Cold / Warm Reset or Standby.
I think this requires the Master MCU to place the bidirectional pins in the High-Z state.
In other words, since Hyper Flash and MCU are in High-Z state with each other, I think it is necessary to prevent latch-up due to shoot-through current.
In order to prevent this, it is the recognition that pull-up must be attached to the signal line.
However, when I looked at the schematic of the reference board (IMXRT1050-EVK) below, there was no external pullup.
Is Pull-up unnecessary?
您好！客户主mcu是 S6J328C，用S26F512S 做图形存储，在做主mcu的bootloader，更新fyperflash图片信息升级代码过程中，这个时候测试突然通讯终端或者突然掉电，导致擦写flash失败。然后客户会遇到系统重新上电或者重新连接到通讯后，flash擦写函数会异常，擦函数也擦不掉，写入也写入不了。当前用的是我们的低级库驱动函数，正常可以擦写。但是中断后会有这个问题，初步怀疑hyperflash内部逻辑不对，请问如何恢复？谢谢
Can we reuse driver for S26KL512SDABHV020 which uses 65 nm MirrorBit Process Technology for S26HL01GTFPBHB020 which uses 45-nm MirrorBit Process Technology?Show Less